PSMN004-60B,118 NXP Semiconductors, PSMN004-60B,118 Datasheet

MOSFET N-CH 60V 75A D2PAK

PSMN004-60B,118

Manufacturer Part Number
PSMN004-60B,118
Description
MOSFET N-CH 60V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PSMN004-60B,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
230W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
168nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
60V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.6 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0036 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
75 A
Power Dissipation
230000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057041118::PSMN004-60B /T3::PSMN004-60B /T3
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
Table 1.
Symbol Parameter
V
I
P
Dynamic characteristics
Q
Static characteristics
R
D
DS
tot
GD
DSon
Low conduction losses due to low
on-state resistance
High frequency computer motherboard
DC-to-DC convertors
PSMN004-60B
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 02 — 15 December 2009
drain-source voltage T
drain current
total power
dissipation
gate-drain charge
drain-source
on-state resistance
Quick reference
Conditions
T
see
T
V
V
see
V
T
j
mb
mb
j
GS
DS
GS
≥ 25 °C; T
= 25 °C; see
Figure 1
Figure 11
= 25 °C; V
= 25 °C; see
= 48 V; T
= 10 V; I
= 10 V; I
j
D
D
and
≤ 175 °C
j
= 25 °C;
GS
= 75 A;
= 25 A;
Figure 9
3
Figure 2
= 10 V;
Suitable for high frequency
applications due to fast switching
characteristics
OR-ing applicationss
and
10
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
54
3.1
Max
60
75
230
-
3.6
Unit
V
A
W
nC
mΩ

Related parts for PSMN004-60B,118

PSMN004-60B,118 Summary of contents

Page 1

... PSMN004-60B N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 — 15 December 2009 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...

Page 2

... D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) PSMN004-60B_2 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Simplified outline mb [ SOT404 (D2PAK) Rev. 02 — 15 December 2009 PSMN004-60B Graphic symbol mbb076 Version SOT404 © NXP B.V. 2009. All rights reserved ...

Page 3

... sup °C; unclamped j(init) 03ah79 120 P der (%) 120 150 180 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Rev. 02 — 15 December 2009 PSMN004-60B Min Max - kΩ -20 20 Figure Figure 1 and Figure 3 - 400 - 230 -55 175 -55 175 ≤ 150 °C ...

Page 4

... Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN004-60B_2 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET DC 10 Rev. 02 — 15 December 2009 PSMN004-60B 03ah81 µs p 100 µ 100 (V) DS © NXP B.V. 2009. All rights reserved. ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN004-60B_2 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Conditions see Figure 4 mounted on a printed circuit board; minimum footprint −5 −4 −3 − Rev. 02 — 15 December 2009 PSMN004-60B Min Typ Max - - 0. 03af48 t p δ ...

Page 6

... Figure 9 and ° see Figure 9 and see Figure MHz see Figure 12 = 1.25 Ω Ω °C G(ext °C; see Rev. 02 — 15 December 2009 PSMN004-60B Min Typ Max Figure 4.4 Figure Figure 500 - 0. 100 - 10 100 - 6.5 7.55 - 3.1 3 °C; - 168 - °C; - 8300 ...

Page 7

... Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values 03aa35 5 V GS(th) (V) max − (V) GS Fig 8. Gate-source threshold voltage as a function of junction temperature Rev. 02 — 15 December 2009 PSMN004-60B 03ah84 V > DSon = 175 ° ° 03aa32 max typ min 0 60 ...

Page 8

... C (pF 150 200 10 Q (nC) G Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 02 — 15 December 2009 PSMN004-60B 03aa28 0 60 120 T (°C) j 03ah87 − (V) DS © NXP B.V. 2009. All rights reserved. 180 C iss C oss C ...

Page 9

... Fig 13. Source current as a function of source-drain voltage; typical values PSMN004-60B_2 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET 100 (A) 80 175 ° ° 0.0 0.5 1.0 V Rev. 02 — 15 December 2009 PSMN004-60B 03ah86 1.5 (V) SD © NXP B.V. 2009. All rights reserved ...

Page 10

... N-channel TrenchMOS SiliconMAX standard level FET 2 scale max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 02 — 15 December 2009 PSMN004-60B mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2009. All rights reserved. SOT404 ...

Page 11

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number PSMN004-60B separated from data sheet PSMN004_60P_60B-01. PSMN004_60P_60B-01 20020426 (9397 750 09156) PSMN004-60B_2 ...

Page 12

... Export might require a prior authorization from national authorities. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS— trademark of NXP B.V. to:salesaddresses@nxp.com Rev. 02 — 15 December 2009 PSMN004-60B © NXP B.V. 2009. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 15 December 2009 Document identifier: PSMN004-60B_2 ...

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