PSMN004-36P NXP Semiconductors, PSMN004-36P Datasheet
PSMN004-36P
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PSMN004-36P Summary of contents
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... It is not possible to make connection to pin 2 of the SOT404 package. 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. PSMN004-36P/36B N-channel enhancement mode field-effect transistor Rev. 01 — 19 November 2001 1 technology. PSMN004-36P in SOT78 (TO-220AB) 2 PSMN004-36B in SOT404 (D -PAK). Very low on-state resistance Fast switching converters Switch mode power supplies. ...
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... peak source (diode forward) current T SM Avalanche ruggedness E non-repetitive avalanche energy AS I non-repetitive avalanche current AS 9397 750 08621 Product data PSMN004-36P/36B N-channel enhancement mode field-effect transistor Conditions 175 ...
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... der Fig 2. Normalized continuous drain current as a function of mounting base temperature Rev. 01 — 19 November 2001 PSMN004-36P/36B 03ag42 50 100 150 200 Tmb (º ------------------- 100 03ag44 100 100 ms ...
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... Product data N-channel enhancement mode field-effect transistor Conditions Figure 4 vertical in still air; SOT78 package mounted on a printed circuit board; minimum footprint; SOT404 package Rev. 01 — 19 November 2001 PSMN004-36P/36B Value Unit 0. 03ag43 ...
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... Source-drain diode V source-drain (diode forward) voltage source-drain (diode forward) voltage reverse recovery time rr Q recovered charge r 9397 750 08621 Product data PSMN004-36P/36B N-channel enhancement mode field-effect transistor Conditions I = 0. ...
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... Fig 6. Transfer characteristics: drain current as a 03ag46 2.6V 2 (A) a Fig 8. Normalized drain-source on-state resistance Rev. 01 — 19 November 2001 PSMN004-36P/36B > DS(ON ( ºC 175 ºC 0 -0.2 0.6 1 and 175 C; V ...
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... Fig 10. Sub-threshold drain current as a function of gate-source voltage (pF iss C oss C rss (V) Rev. 01 — 19 November 2001 PSMN004-36P/36B 03aa36 min typ max 0 0.5 1 1 03ag49 10 2 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. ...
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... Product data N-channel enhancement mode field-effect transistor 03ag48 ºC 0 Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 19 November 2001 PSMN004-36P/36B 03ag50 º 120 ...
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... 1.3 0.7 15.8 6.4 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC EIAJ 3-lead TO-220AB SC-46 Rev. 01 — 19 November 2001 PSMN004-36P/36B mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 13.5 2.79 3.6 2.7 2.2 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2001. All rights reserved. SOT78 ISSUE DATE ...
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... 2 scale max. 0.64 1.60 10.30 2.90 11 2.54 0.46 1.20 9.70 2.10 REFERENCES JEDEC EIAJ Rev. 01 — 19 November 2001 PSMN004-36P/36B 2 -PAK); 3 leads mounting base 15.80 2.60 14.80 2.20 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2001. All rights reserved. SOT404 ISSUE DATE 99-06-25 01-02- ...
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... Philips Semiconductors www.DataSheet4U.com 10. Revision history Table 6: Revision history Rev Date CPCN 01 20011119 9397 750 08621 Product data N-channel enhancement mode field-effect transistor Description Product Data; Initial Version Rev. 01 — 19 November 2001 PSMN004-36P/36B © Koninklijke Philips Electronics N.V. 2001. All rights reserved ...
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... Rev. 01 — 19 November 2001 PSMN004-36P/36B Fax: + 24825 © Koninklijke Philips Electronics N.V. 2001. All rights reserved ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 19 November 2001 Document order number: 9397 750 08621 PSMN004-36P/36B N-channel enhancement mode field-effect transistor ...