PSMN004-60B,118 NXP Semiconductors, PSMN004-60B,118 Datasheet - Page 11

• Manufacturer Part Number: PSMN004-60B,118
• Description: MOSFET N-CH 60V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN004-60B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 230W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 168nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 60V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0036 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057041118::PSMN004-60B /T3::PSMN004-60B /T3

NXP Semiconductors
8. Revision history
Table 7.
PSMN004-60B_2
Product data sheet
Document ID
PSMN004-60B_2
Modifications:
PSMN004_60P_60B-01
(9397 750 09156)
Revision history
Release date
20091215
20020426
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number PSMN004-60B separated from data sheet PSMN004_60P_60B-01.
Data sheet status
Product data sheet
Product data
Rev. 02 — 15 December 2009
N-channel TrenchMOS SiliconMAX standard level FET
Change notice
-
-
PSMN004-60B
Supersedes
PSMN004_60P_60B-01
-
© NXP B.V. 2009. All rights reserved.
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