STF10N65K3

Manufacturer Part NumberSTF10N65K3
DescriptionMOSFET N-CH 650V 10A TO-220FP
ManufacturerSTMicroelectronics
SeriesSuperMESH3™
STF10N65K3 datasheet
 

Specifications of STF10N65K3

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs1 Ohm @ 3.6A, 10VDrain To Source Voltage (vdss)650V
Current - Continuous Drain (id) @ 25° C10AVgs(th) (max) @ Id4.5V @ 100µA
Gate Charge (qg) @ Vgs42nC @ 10VInput Capacitance (ciss) @ Vds1180pF @ 50V
Power - Max35WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)Lead Free Status / RoHS StatusLead free / RoHS Compliant
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
11
12
13
Page 1/13

Download datasheet (807Kb)Embed
Next
Features
R
DS(on)
Type
V
DSS
max
< 1 Ω
STF10N65K3
650 V
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitances
Improved diode reverse recovery
characteristics
Zener-protected
Application
Switching applications
Description
SuperMESH3™ is a new Power MOSFET
technology that is obtained via improvements
applied to STMicroelectronics’ SuperMESH™
technology combined with a new optimized
vertical structure. The resulting product has an
extremely low on resistance, superior dynamic
performance and high avalanche capability,
making it especially suitable for the most
demanding applications.
Table 1.
Device summary
Order codes
STF10N65K3
June 2009
N-channel 650 V, 0.9 Ω , 10 A, TO-220FP
SuperMESH3™ Power MOSFET
I
Pw
D
10 A
35 W
Figure 1.
Marking
Package
10N65K3
TO-220FP
Doc ID 15732 Rev 1
STF10N65K3
3
2
1
TO-220FP
Internal schematic diagram
D(2)
G(1)
S(3)
Packaging
Tube
AM01476v1
1/13
www.st.com
13

STF10N65K3 Summary of contents

  • Page 1

    ... Table 1. Device summary Order codes STF10N65K3 June 2009 N-channel 650 V, 0.9 Ω TO-220FP SuperMESH3™ Power MOSFET Figure 1. Marking Package 10N65K3 TO-220FP Doc ID 15732 Rev 1 STF10N65K3 TO-220FP Internal schematic diagram D(2) G(1) S(3) Packaging Tube AM01476v1 1/13 www.st.com 13 ...

  • Page 2

    ... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/ Doc ID 15732 Rev 1 STF10N65K3 . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

  • Page 3

    ... STF10N65K3 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Max current during repetitive or single pulse I AR avalanche (pulse width limited Single pulse avalanche energy ...

  • Page 4

    ... Test conditions V = 310 4.7 Ω Figure (see Doc ID 15732 Rev 1 Min. Typ 650 =125 ° 100 µ 3.6 A Min. Typ. 1180 - 125 7 7.4 23 Min. Typ. 14 15) 35 STF10N65K3 Max. Unit V 1 µA 50 µA 10 µA 4.5 V Ω 1 Max. Unit Ω Max Unit ...

  • Page 5

    ... STF10N65K3 Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µ ...

  • Page 6

    ... AM03922v1 10µs 100µs 1ms 10ms V (V) 100 DS Figure 5. AM03923v1 ( ( temperature Figure 7. AM03925v1 R DS(on) (Ω) 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 75 100 125 150 T (°C) J Doc ID 15732 Rev 1 STF10N65K3 Thermal impedance Transfer characteristics Static drain-source on resistance AM03924v1 9 V (V) GS ...

  • Page 7

    ... STF10N65K3 Figure 8. Output capacitance stored energy E oss (µ 200 300 0 100 Figure 10. Gate charge vs gate-source voltage Figure 11. Normalized on resistance ( =520V = Figure 12. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.10 1.00 0.90 0.80 0.70 -50 - Figure 9. AM03929v1 (pF) 1000 100 400 500 600 V (V) ...

  • Page 8

    ... Electrical characteristics Figure 14. Source-drain diode forward characteristics V SD (V) 0.9 0.8 0.7 0.6 0.5 0.4 0 8/13 AM03932v1 T =-50° =25° =150° ( Doc ID 15732 Rev 1 STF10N65K3 ...

  • Page 9

    ... STF10N65K3 3 Test circuits Figure 15. Switching times test circuit for resistive load D.U. Figure 17. Test circuit for inductive load switching and diode recovery times FAST L=100µH G D.U.T. DIODE Ω Figure 19. Unclamped inductive waveform Figure 16. Gate charge test circuit 3.3 2200 µF µ ...

  • Page 10

    ... Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. 10/13 Doc ID 15732 Rev 1 STF10N65K3 ® ...

  • Page 11

    ... STF10N65K3 Dim TO-220FP mechanical data Dia Doc ID 15732 Rev 1 Package mechanical data 7012510_Rev_J G 11/13 ...

  • Page 12

    ... Revision history 5 Revision history Table 9. Document revision history Date 30-Jun-2009 12/13 Revision 1 First release Doc ID 15732 Rev 1 STF10N65K3 Changes ...

  • Page 13

    ... STF10N65K3 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...