STF10N65K3 STMicroelectronics, STF10N65K3 Datasheet

STF10N65K3
Manufacturer Part Number	STF10N65K3
Description	MOSFET N-CH 650V 10A TO-220FP
Manufacturer	STMicroelectronics
Series	SuperMESH3™
STF10N65K3 datasheet	1. STF10N65K3.pdf (13 pages)

Specifications of STF10N65K3
Fet Type	MOSFET N-Channel, Metal Oxide	Fet Feature	Standard
Rds On (max) @ Id, Vgs	1 Ohm @ 3.6A, 10V	Drain To Source Voltage (vdss)	650V
Current - Continuous Drain (id) @ 25° C	10A	Vgs(th) (max) @ Id	4.5V @ 100µA
Gate Charge (qg) @ Vgs	42nC @ 10V	Input Capacitance (ciss) @ Vds	1180pF @ 50V
Power - Max	35W	Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack (Straight Leads)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant

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Features

DS(on)

Type

DSS

max

< 1 Ω

STF10N65K3

650 V

■

100% avalanche tested

■

Extremely high dv/dt capability

■

Gate charge minimized

■

Very low intrinsic capacitances

■

Improved diode reverse recovery

characteristics

■

Zener-protected

Application

■

Switching applications

Description

SuperMESH3™ is a new Power MOSFET

technology that is obtained via improvements

applied to STMicroelectronics’ SuperMESH™

technology combined with a new optimized

vertical structure. The resulting product has an

extremely low on resistance, superior dynamic

performance and high avalanche capability,

making it especially suitable for the most

demanding applications.

Table 1.

Device summary

Order codes

STF10N65K3

June 2009

N-channel 650 V, 0.9 Ω , 10 A, TO-220FP

SuperMESH3™ Power MOSFET

10 A

35 W

Figure 1.

Marking

Package

10N65K3

TO-220FP

Doc ID 15732 Rev 1

STF10N65K3

TO-220FP

Internal schematic diagram

D(2)

G(1)

S(3)

Packaging

Tube

AM01476v1

1/13

www.st.com

Download datasheet (807Kb)

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STF10N65K3 Summary of contents
Page 1 ... Table 1. Device summary Order codes STF10N65K3 June 2009 N-channel 650 V, 0.9 Ω TO-220FP SuperMESH3™ Power MOSFET Figure 1. Marking Package 10N65K3 TO-220FP Doc ID 15732 Rev 1 STF10N65K3 TO-220FP Internal schematic diagram D(2) G(1) S(3) Packaging Tube AM01476v1 1/13 www.st.com 13 ... Page 2 ... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/ Doc ID 15732 Rev 1 STF10N65K3 . . . . . . . . . . . . . . . . . . . . . . . . . 6 ... Page 3 ... STF10N65K3 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Max current during repetitive or single pulse I AR avalanche (pulse width limited Single pulse avalanche energy ... Page 4 ... Test conditions V = 310 4.7 Ω Figure (see Doc ID 15732 Rev 1 Min. Typ 650 =125 ° 100 µ 3.6 A Min. Typ. 1180 - 125 7 7.4 23 Min. Typ. 14 15) 35 STF10N65K3 Max. Unit V 1 µA 50 µA 10 µA 4.5 V Ω 1 Max. Unit Ω Max Unit ... Page 5 ... STF10N65K3 Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µ ... Page 6 ... AM03922v1 10µs 100µs 1ms 10ms V (V) 100 DS Figure 5. AM03923v1 ( ( temperature Figure 7. AM03925v1 R DS(on) (Ω) 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 75 100 125 150 T (°C) J Doc ID 15732 Rev 1 STF10N65K3 Thermal impedance Transfer characteristics Static drain-source on resistance AM03924v1 9 V (V) GS ... Page 7 ... STF10N65K3 Figure 8. Output capacitance stored energy E oss (µ 200 300 0 100 Figure 10. Gate charge vs gate-source voltage Figure 11. Normalized on resistance ( =520V = Figure 12. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.10 1.00 0.90 0.80 0.70 -50 - Figure 9. AM03929v1 (pF) 1000 100 400 500 600 V (V) ... Page 8 ... Electrical characteristics Figure 14. Source-drain diode forward characteristics V SD (V) 0.9 0.8 0.7 0.6 0.5 0.4 0 8/13 AM03932v1 T =-50° =25° =150° ( Doc ID 15732 Rev 1 STF10N65K3 ... Page 9 ... STF10N65K3 3 Test circuits Figure 15. Switching times test circuit for resistive load D.U. Figure 17. Test circuit for inductive load switching and diode recovery times FAST L=100µH G D.U.T. DIODE Ω Figure 19. Unclamped inductive waveform Figure 16. Gate charge test circuit 3.3 2200 µF µ ... Page 10 ... Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. 10/13 Doc ID 15732 Rev 1 STF10N65K3 ® ... Page 11 ... STF10N65K3 Dim TO-220FP mechanical data Dia Doc ID 15732 Rev 1 Package mechanical data 7012510_Rev_J G 11/13 ... Page 12 ... Revision history 5 Revision history Table 9. Document revision history Date 30-Jun-2009 12/13 Revision 1 First release Doc ID 15732 Rev 1 STF10N65K3 Changes ... Page 13 ... STF10N65K3 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

STF10N65K3 Summary of contents

Page 1
... Table 1. Device summary Order codes STF10N65K3 June 2009 N-channel 650 V, 0.9 Ω TO-220FP SuperMESH3™ Power MOSFET Figure 1. Marking Package 10N65K3 TO-220FP Doc ID 15732 Rev 1 STF10N65K3 TO-220FP Internal schematic diagram D(2) G(1) S(3) Packaging Tube AM01476v1 1/13 www.st.com 13 ...
Page 2
... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/ Doc ID 15732 Rev 1 STF10N65K3 . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...
Page 3
... STF10N65K3 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Max current during repetitive or single pulse I AR avalanche (pulse width limited Single pulse avalanche energy ...
Page 4
... Test conditions V = 310 4.7 Ω Figure (see Doc ID 15732 Rev 1 Min. Typ 650 =125 ° 100 µ 3.6 A Min. Typ. 1180 - 125 7 7.4 23 Min. Typ. 14 15) 35 STF10N65K3 Max. Unit V 1 µA 50 µA 10 µA 4.5 V Ω 1 Max. Unit Ω Max Unit ...
Page 5
... STF10N65K3 Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µ ...
Page 6
... AM03922v1 10µs 100µs 1ms 10ms V (V) 100 DS Figure 5. AM03923v1 ( ( temperature Figure 7. AM03925v1 R DS(on) (Ω) 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 75 100 125 150 T (°C) J Doc ID 15732 Rev 1 STF10N65K3 Thermal impedance Transfer characteristics Static drain-source on resistance AM03924v1 9 V (V) GS ...
Page 7
... STF10N65K3 Figure 8. Output capacitance stored energy E oss (µ 200 300 0 100 Figure 10. Gate charge vs gate-source voltage Figure 11. Normalized on resistance ( =520V = Figure 12. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.10 1.00 0.90 0.80 0.70 -50 - Figure 9. AM03929v1 (pF) 1000 100 400 500 600 V (V) ...
Page 8
... Electrical characteristics Figure 14. Source-drain diode forward characteristics V SD (V) 0.9 0.8 0.7 0.6 0.5 0.4 0 8/13 AM03932v1 T =-50° =25° =150° ( Doc ID 15732 Rev 1 STF10N65K3 ...
Page 9
... STF10N65K3 3 Test circuits Figure 15. Switching times test circuit for resistive load D.U. Figure 17. Test circuit for inductive load switching and diode recovery times FAST L=100µH G D.U.T. DIODE Ω Figure 19. Unclamped inductive waveform Figure 16. Gate charge test circuit 3.3 2200 µF µ ...
Page 10
... Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. 10/13 Doc ID 15732 Rev 1 STF10N65K3 ® ...
Page 11
... STF10N65K3 Dim TO-220FP mechanical data Dia Doc ID 15732 Rev 1 Package mechanical data 7012510_Rev_J G 11/13 ...
Page 12
... Revision history 5 Revision history Table 9. Document revision history Date 30-Jun-2009 12/13 Revision 1 First release Doc ID 15732 Rev 1 STF10N65K3 Changes ...
Page 13
... STF10N65K3 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

STF10N65K3

STF10N65K3

Specifications of STF10N65K3

Related parts for STF10N65K3

STF10N65K3 Summary of contents

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