STF10N65K3 STMicroelectronics, STF10N65K3 Datasheet - Page 7

• Manufacturer Part Number: STF10N65K3
• Description: MOSFET N-CH 650V 10A TO-220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STF10N65K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 1180pF @ 50V
• Power - Max: 35W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STF10N65K3
Figure 8.
Figure 10.
Figure 12. Normalized gate threshold voltage
(norm)
V
GS(th)
1.00
0.80
0.70
1.10
V
0.90
(V)
E
(µJ)
12
10
GS
oss
6
4
2
8
0
0
4
3
2
8
7
6
5
1
0
0
V
-50
DS
Output capacitance stored energy
vs temperature
Gate charge vs gate-source voltage Figure 11. Normalized on resistance vs
100
10
-25
V
200
20
0
DD
I
D
=520V
=7A
25 50
300
30
75
400
40
100 125 150
500
50
V
GS
600
Q
Doc ID 15732 Rev 1
g
(nC)
T
AM03929v1
AM03927v1
AM03930v1
V
J
400
500
100
0
300
200
(°C)
DS
(V)
Figure 9.
Figure 13. Maximum avalanche energy vs
(norm)
R
1000
DS(on)
100
(pF)
(mJ)
E
10
160
140
120
220
200
180
100
C
1.0
0.5
0.0
1.5
2.0
AS
2.5
60
40
20
80
1
0.1
0
0
Capacitance variations
temperature
temperature
-50
20
-25
1
40
0
25 50
60
Electrical characteristics
10
V
I
D
DD
80
=7.2 A
=50 V
75
100
100 125 150
100
120 140
V
DS
AM03931v1
AM03933v1
AM03928v1
(V)
T
Ciss
Crss
J
T
Coss
(°C)
J
(°C)
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