STF10N65K3 STMicroelectronics, STF10N65K3 Datasheet - Page 5

• Manufacturer Part Number: STF10N65K3
• Description: MOSFET N-CH 650V 10A TO-220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STF10N65K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 1180pF @ 50V
• Power - Max: 35W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STF10N65K3
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 8.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Symbol
I
BV
V
SDM
I
I
SD
RRM
RRM
I
Q
Q
SD
t
t
GSO
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown
voltage
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Doc ID 15732 Rev 1
I
I
V
I
V
(see
Igs=± 1 mA (open drain)
SD
SD
SD
DD
DD
= 7 A, V
= 7 A, di/dt = 100A/µs
= 7 A, di/dt = 100 A/µs
= 60 V (see
= 60 V, T
Figure
Test conditions
Test conditions
GS
20)
j
= 150 °C
= 0
Figure
20)
Electrical characteristics
Min.
Min.
30
-
-
-
-
Typ.
320
410
Typ.
2.9
13
14
2
-
Max. Unit
28.8
Max. Unit
7.2
1.5
-
µC
µC
ns
ns
A
A
V
A
A
5/13
V