STF10N65K3 STMicroelectronics, STF10N65K3 Datasheet - Page 5

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STF10N65K3

Manufacturer Part Number
STF10N65K3
Description
MOSFET N-CH 650V 10A TO-220FP
Manufacturer
STMicroelectronics
Series
SuperMESH3™r
Datasheet

Specifications of STF10N65K3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1 Ohm @ 3.6A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
42nC @ 10V
Input Capacitance (ciss) @ Vds
1180pF @ 50V
Power - Max
35W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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STF10N65K3
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 8.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Symbol
I
BV
V
SDM
I
I
SD
RRM
RRM
I
Q
Q
SD
t
t
GSO
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown
voltage
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Doc ID 15732 Rev 1
I
I
V
I
V
(see
Igs=± 1 mA (open drain)
SD
SD
SD
DD
DD
= 7 A, V
= 7 A, di/dt = 100A/µs
= 7 A, di/dt = 100 A/µs
= 60 V (see
= 60 V, T
Figure
Test conditions
Test conditions
GS
20)
j
= 150 °C
= 0
Figure
20)
Electrical characteristics
Min.
Min.
30
-
-
-
-
Typ.
320
410
Typ.
2.9
13
14
2
-
Max. Unit
28.8
Max. Unit
7.2
1.5
-
µC
µC
ns
ns
A
A
V
A
A
5/13
V

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