MOSFET N-CH 600V 11A TO220-3

SPA11N60CFD

Manufacturer Part NumberSPA11N60CFD
DescriptionMOSFET N-CH 600V 11A TO220-3
ManufacturerInfineon Technologies
SeriesCoolMOS™
SPA11N60CFD datasheet
 


Specifications of SPA11N60CFD

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs440 mOhm @ 7A, 10VDrain To Source Voltage (vdss)600V
Current - Continuous Drain (id) @ 25° C11AVgs(th) (max) @ Id5V @ 1.9mA
Gate Charge (qg) @ Vgs64nC @ 10VInput Capacitance (ciss) @ Vds1200pF @ 25V
Power - Max33WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Transistor PolarityN Channel
Continuous Drain Current Id11ADrain Source Voltage Vds600V
On Resistance Rds(on)440mohmRds(on) Test Voltage Vgs10V
Voltage Vgs Max20VOperating Temperature Range-55°C To
Threshold Voltage Vgs Typ4VRohs CompliantYes
ConfigurationSingleResistance Drain-source Rds (on)0.44 Ohms
Drain-source Breakdown Voltage600 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current11 APower Dissipation33 W
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesSP000216317  
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TM
CoolMOS
Power Transistor
Features
• New revolutionary high voltage technology
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
• Periodic avalanche rated
• Qualified for industrial grade applications according to JEDEC
Type
Package
SPA11N60CFD
TO-220-3-31
Maximum ratings, at T
=25 °C, unless otherwise specified
j
Parameter
1)
Continuous drain current
2)
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
Drain source voltage slope
Reverse diode dv /dt
Maximum diode commutation speed
Gate source voltage
Power dissipation
Operating and storage temperature
Rev. 1.4
Ordering Code
SP000216317
Symbol Conditions
I
T
=25 °C
D
C
T
=100 °C
C
I
T
=25 °C
D,pulse
C
E
I
=5.5 A, V
AS
D
DD
2),3)
E
I
=11 A, V
AR
D
DD
2),3)
I
AR
I
=11 A, V
D
DS
dv /dt
T
=125 °C
j
dv /dt
I
=11 A, V
S
DS
T
=125 °C
j
di /dt
V
static
GS
AC (f >1 Hz)
P
T
=25 °C
tot
C
T
, T
j
stg
page 1
SPA11N60CFD
Product Summary
V
DS
R
DS(on),max
1)
I
D
PG-TO220-3-31
0)
Marking
11N60CFD
Value
11
7
28
=50 V
340
=50 V
0.6
11
=480 V,
80
40
=480 V,
600
±20
±30
33
-55 ... 150
600
V
0.44
11
A
Unit
A
mJ
A
V/ns
V/ns
A/µs
V
W
°C
2010-12-21

SPA11N60CFD Summary of contents

  • Page 1

    ... DD 2), = 2), = /dt T =125 ° / =125 ° /dt V static >1 Hz =25 °C tot stg page 1 SPA11N60CFD Product Summary DS(on),max PG-TO220-3-31 0) Marking 11N60CFD Value =50 V 340 =50 V 0.6 11 =480 =480 V, 600 ±20 ±30 33 -55 ... 150 600 V 0. Unit V/ns V/ns A/µs ...

  • Page 2

    ... GS(th =600 DSS T =25 ° =600 =150 ° = GSS = DS(on) T =25 ° = =150 ° MHz, open drain G |V |>2 DS(on)max page 2 SPA11N60CFD Values Unit min. typ. max 3.8 K 260 °C 600 - - V - 700 - 1.1 - µA - 900 - - - 100 nA - 0.38 0. 2010-12-21 ...

  • Page 3

    ... Symbol Conditions C iss = oss f =1 MHz C rss C o(er 480 V C o(tr) t d(on) V =480 = = =6.8 d(off =480 plateau while V oss DS while V oss DS page 3 SPA11N60CFD Values Unit min. typ. max. - 1200 - pF - 390 - - 7 * rising from 0 to 80% V DSS. is rising from 0 to 80% V DSS. 2010-12-21 ...

  • Page 4

    ... Rev. 1.4 Symbol Conditions =25 ° S,pulse = =25 ° =480 /dt =100 A/µ rrm Unit Symbol Value typ. K/W C 0.0000989 th1 C 0.000939 th2 C 0.00303 th3 C 0.0245 th4 C 0.951 th5 page 4 SPA11N60CFD Values Unit min. typ. max 1.0 1 140 - ns - 0.7 - µ Unit Ws/K 2010-12-21 ...

  • Page 5

    ... parameter 0.2 0.1 0.05 -1 0.02 10 0.01 single pulse - Rev. 1.4 2 Safe operating area I =f(V D parameter 120 160 T [° Typ. output characteristics I =f(V D parameter [s] p page 5 SPA11N60CFD ); T =25 ° limited by on-state resistance [ =25 ° 10µ µs 10 µs 100 µ ...

  • Page 6

    ... DS(on 1.2 1 0.8 0 0.4 0.2 0 -60 -20 20 Rev. 1.4 6 Typ. drain-source on-state resistance R DS(on) parameter Typ. transfer characteristics = =f(V D parameter: T typ 60 100 140 180 T [°C] j page 6 SPA11N60CFD =f =150 ° 1.8 1.6 1.4 5 0.8 0.6 0 |>2 DS(on)max [V] GS ...

  • Page 7

    ... T j(start Rev. 1.4 10 Forward characteristics of reverse diode I =f(V F parameter: T 480 V 120 [nC] gate 12 Avalanche energy E =f °C 125 ° [µs] AR page 7 SPA11N60CFD ) ° 150 °C 25 ° 350 300 250 200 150 100 100 T [°C] j 150 °C, 98% 1.5 2 140 180 2010-12-21 ...

  • Page 8

    ... E = f(V ) oss 100 200 Rev. 1.4 14 Typ. capacitances C =f(V 60 100 140 180 T [° Typ. reverse recovery charge Q =f(T rr 300 400 500 600 V [V] DS page 8 SPA11N60CFD ); MHz Ciss Coss 1 Crss 100 200 300 V [V] DS );parameter 1.2 1.1 1 0.9 0.8 0.7 0 [°C] ...

  • Page 9

    ... A/µ 1.2 1 0.8 0.6 125 °C 0.4 25 °C 0 Rev. 1.4 18 Typ. reverse recovery charge Q =f(di /dt ); parameter [A] S page 9 SPA11N60CFD = 1.6 125 °C 1.5 1.4 1.3 1.2 1.1 25 °C 1 0.9 0.8 0.7 0.6 100 300 500 di/ dt [A/µs] 700 900 2010-12-21 ...

  • Page 10

    ... Definition of diode switching characteristics Rev. 1.4 page 10 SPA11N60CFD 2010-12-21 ...

  • Page 11

    ... PG-TO-220-3-31 (FullPAK) Rev. 1.4 page 11 SPA11N60CFD 2010-12-21 ...

  • Page 12

    ... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.4 page 12 SPA11N60CFD 2010-12-21 ...