SPA11N60CFD Infineon Technologies, SPA11N60CFD Datasheet - Page 2

• Manufacturer Part Number: SPA11N60CFD
• Description: MOSFET N-CH 600V 11A TO220-3
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPA11N60CFD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 440 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 1.9mA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 33W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 440mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.44 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 33 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000216317

Rev. 1.4
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Soldering temperature, wave soldering T
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Avalanche breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
V
I
I
R
R
g
DSS
GSS
fs
sold
(BR)DSS
(BR)DS
GS(th)
thJC
thJA
DS(on)
G
leaded
1.6 mm (0.063 in.)
from case for 10 s
V
V
V
V
T
V
T
V
V
T
V
T
f =1 MHz, open drain
|V
I
D
page 2
j
j
j
j
GS
GS
DS
DS
DS
GS
GS
GS
=25 °C
=150 °C
=25 °C
=150 °C
=7 A
DS
=0 V, I
=0 V, I
=V
=600 V, V
=600 V, V
=20 V, V
=10 V, I
=10 V, I
|>2|I
GS
, I
D
|R
D
D
D
=250 µA
=11 A
D
D
=1.9 mA
DS(on)max
DS
=7 A,
=7 A,
GS
GS
=0 V
=0 V,
=0 V,
,
min.
600
3
-
-
-
-
-
-
-
-
-
-
-
Values
0.86
0.38
1.02
typ.
700
900
1.1
8.3
4
-
-
-
-
-
SPA11N60CFD
max.
0.44
260
100
3.8
62
5
-
-
-
-
-
-
-
Unit
K/W
°C
V
µA
nA
S
2010-12-21