SPA11N60CFD Infineon Technologies, SPA11N60CFD Datasheet - Page 9

• Manufacturer Part Number: SPA11N60CFD
• Description: MOSFET N-CH 600V 11A TO220-3
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPA11N60CFD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 440 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 1.9mA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 33W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 440mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.44 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 33 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000216317

Rev. 1.4
17 Typ. reverse recovery charge
Q
rr
=f(I
1.2
0.8
0.6
0.4
0.2
1
S
); parameter: di/ dt =100 A/µs
1
125 °C
25 °C
3
5
I
S
[A]
7
9
11
page 9
18 Typ. reverse recovery charge
Q
rr
=f(di /dt ); parameter: I
1.6
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0.6
1
100
300
125 °C
25 °C
di/ dt [A/µs]
D
=11 A
500
SPA11N60CFD
700
2010-12-21
900