SPA11N60CFD Infineon Technologies, SPA11N60CFD Datasheet - Page 6

• Manufacturer Part Number: SPA11N60CFD
• Description: MOSFET N-CH 600V 11A TO220-3
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPA11N60CFD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 440 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 1.9mA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 33W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 440mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.44 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 33 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000216317

Rev. 1.4
5 Typ. output characteristics
I
parameter: t
7 Drain-source on-state resistance
R
D
DS(on)
=f(V
1.2
0.8
0.6
0.4
0.2
20
15
10
DS
=f(T
1
0
5
0
-60
0
); T
j
); I
p
j
=150 °C
= 10µs V
D
-20
=7 A; V
5
20
98 %
GS
GS
=10 V
V
T
DS
j
10
60
[°C]
typ
[V]
100
15
140
20 V
6.5 V
6 V
5.5 V
5 V
7 V
10 V
8 V
180
page 6
20
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. transfer characteristics
I
parameter: T
D
DS(on)
=f(V
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
40
30
20
10
=f(I
2
1
0
GS
0
0
0
); |V
D
); T
5 V
DS
j
GS
j
|>2|I
=150 °C
2
2
5.5 V
D
|R
4
4
6 V
DS(on)max
V
I
D
GS
6.5 V
6
6
[A]
[V]
SPA11N60CFD
8
8
10 V
7 V
20 V
10
10
C °150
C °25
2010-12-21
12
12