RFP40N10 Fairchild Semiconductor, RFP40N10 Datasheet

MOSFET N-CH 100V 40A TO-220AB

RFP40N10

Manufacturer Part Number
RFP40N10
Description
MOSFET N-CH 100V 40A TO-220AB
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of RFP40N10

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
40 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
300nC @ 20V
Power - Max
160W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2002 Fairchild Semiconductor Corporation
40A, 100V, 0.040 Ohm, N-Channel Power
MOSFETs
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, relay drivers and emitter switches for bipolar
transistors. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA9846
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e. RF1S40N10SM9A.
Packaging
RFG40N10
RFP40N10
RF1S40N10
RF1S40N10SM
PART NUMBER
(FLANGE)
DRAIN
SOURCE
GATE
JEDEC STYLE TO-247
TO-247
TO-220AB
TO-262AA
TO-263AB
JEDEC TO-263AB
PACKAGE
Data Sheet
RFP40N10
F1S40N10
F1S40N10
RFG40N10
SOURCE
(FLANGE)
DRAIN
DRAIN
BRAND
GATE
RFG40N10, RFP40N10, RF1S40N10,
Features
• 40A, 100V
• r
• UIS Rating Curve
• SOA is Power Dissipation Limited
• 175
• Related Literature
Symbol
- TB334 “Guidelines for Soldering Surface Mount
DS(ON)
Components to PC Boards”
o
C Operating Temperature
January 2002
(FLANGE)
= 0.040 Ω
DRAIN
(FLANGE)
DRAIN
RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Rev. C
JEDEC TO-220AB
JEDEC TO-262AA
G
D
S
RF1S40N10SM
SOURCE
SOURCE
DRAIN
DRAIN
GATE
GATE

Related parts for RFP40N10

RFP40N10 Summary of contents

Page 1

... TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol BRAND RFG40N10 RFP40N10 F1S40N10 F1S40N10 SOURCE DRAIN GATE DRAIN (FLANGE) RF1S40N10SM January 2002 = 0.040 Ω JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-262AA SOURCE DRAIN GATE DRAIN (FLANGE) RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Rev. C ...

Page 2

... L 260 MIN TYP 100 - 150 4.2 Ω 80V 40A 2.0 Ω (Figures 11 MIN TYP - - - - RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Rev. C UNITS MAX UNITS - µ µ ± 100 nA Ω 0.040 100 ns 300 nC 150 nC 7 0. C/W MAX UNITS 1.5 V 200 ns ...

Page 3

... CASE TEMPERATURE ( C CASE TEMPERATURE (L)(I )/(1.3 RATED DSS ≠ (L/R)LN[(I *R)/(1.3 RATED DSS 1 0.01 0 TIME IN AVALANCHE (ms) AV CAPABILITY PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 15V GATE TO SOURCE VOLTAGE (V) GS FIGURE 6. TRANSFER CHARACTERISTICS RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Rev. C 150 175 ...

Page 4

... D 1.25 1.00 0.75 0.50 0. 100 T JUNCTION TEMPERATURE ( J, JUNCTION TEMPERATURE 6000 5000 4000 C 3000 ISS 2000 C OSS 1000 C RSS DRAIN TO SOURCE VOLTAGE ( DSS 7.5 5.0 2 g(REF g(ACT) RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Rev. C 150 200 0V 1MHz ISS RSS GD ≈ OSS ...

Page 5

... AS 0 0.01Ω DUT V GS 10% 0 FIGURE 15. RESISTIVE SWITCHING WAVEFORMS DUT g(REF DSS FIGURE 13. UNCLAMPED ENERGY WAVEFORMS d(ON) d(OFF 90% 10% 50% PULSE WIDTH Q g(TOT g(10 10V GS Q g(TH) FIGURE 17. GATE CHARGE WAVEFORMS RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Rev OFF t f 90% 10% 90% 50 20V GS ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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