FCI11N60 Fairchild Semiconductor, FCI11N60 Datasheet

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FCI11N60

Manufacturer Part Number
FCI11N60
Description
MOSFET N-CH 600V 11A I2PAK
Manufacturer
Fairchild Semiconductor
Series
SuperFET™r
Datasheet

Specifications of FCI11N60

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
52nC @ 10V
Input Capacitance (ciss) @ Vds
1490pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Dc
05+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCI11N60
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FCI11N60
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2008 Fairchild Semiconductor Corporation
FCI11N60 Rev. A2
• RoHS Compliant
FCI11N60
600V N-Channel MOSFET
Features
• 650V @T
• Typ. R
• Ultra Low Gate Charge (typ. Q
• Low Effective Output Capacitance (typ. C
• 100% Avalanche Tested
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θJA
T
STG
DS(on)
J
= 150°C
= 0.32Ω
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
G
g
= 40nC)
D
S
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
Parameter
C
= 25°C)
oss
eff. = 95pF)
C
C
= 25°C)
= 100°C)
1
Description
SuperFET
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
TM
is, Fairchild’s proprietary, new generation of high
FCI11N60
S
-55 to +150
D
FCI11N60
± 30
12.5
600
340
125
300
4.5
1.0
11
33
11
62.5
7
1.0
SuperFET
December 2008
www.fairchildsemi.com
Unit
W/°C
V/ns
Unit
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FCI11N60 Summary of contents

Page 1

... R Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA ©2008 Fairchild Semiconductor Corporation FCI11N60 Rev. A2 Description SuperFET voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. eff. = 95pF) This advanced technology has been tailored to minimize con- ...

Page 2

... ≤ 11A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FCI11N60 Rev. A2 Package Reel Size 2 I -PAK -- T = 25°C unless otherwise noted C Conditions 250µA, T ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 6000 5000 4000 C oss 3000 C 2000 iss C 1000 rss Drain-Source Voltage [V] DS FCI11N60 Rev. A2 Figure 2. Transfer Characteristics Notes : 1. 250 µ s Pulse Test Figure 4. Body Diode Forward Voltage 10V 20V Note : ...

Page 4

... T = 150 Single Pulse - Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FCI11N60 Rev. A2 (Continued) Figure 8. On-Resistance Variation vs. Temperature 3.0 2.5 2.0 1.5 1.0 Notes : 250 µ A 0.5 D 0.0 100 150 200 -100 o C] Figure 10. Maximum Drain Current vs. Case Temperature 12.5 10.0 ...

Page 5

... 3mA 3mA 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V FCI11N60 Rev. A2 Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V 300nF 300nF DUT DUT Resistive Switching Test Circuit & Waveforms ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FCI11N60 Rev. A2 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

Page 7

... Mechanical Dimensions FCI11N60 Rev PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FCI11N60 Rev. A2 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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