FDS7098N3 Fairchild Semiconductor, FDS7098N3 Datasheet - Page 4

• Manufacturer Part Number: FDS7098N3
• Description: MOSFET N-CH 30V 14A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS7098N3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 5V
• Input Capacitance (ciss) @ Vds: 1587pF @ 15V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
1000
0.01
100
0.001
Figure 9. Maximum Safe Operating Area.
0.1
10
10
0.01
Figure 7. Gate Charge Characteristics.
1
8
6
4
2
0
0.1
0.01
0.0001
0
1
R
SINGLE PULSE
R
DS(ON)
θJA
V
I
T
D
GS
A
D = 0.5
= 14A
= 85
= 25
LIMIT
= 10V
0.2
5
0.1
0.05
0.02
o
o
0.01
C/W
C
0.1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
10
Q
0.001
SINGLE PULSE
g
, GATE CHARGE (nC)
15
1
DC
Figure 11. Transient Thermal Response Curve.
10s
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
V
1s
DS
100ms
= 10V
20
0.01
10ms
10
20V
1ms
25
100µs
15V
100
30
0.1
t
1
, TIME (sec)
2400
2000
1600
1200
800
400
50
40
30
20
10
Figure 8. Capacitance Characteristics.
0
0
0.01
0
1
C
Figure 10. Single Pulse Maximum
RSS
5
0.1
C
OSS
Power Dissipation.
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
10
1
C
t
1
ISS
, TIME (sec)
15
P(pk)
Duty Cycle, D = t
T
10
R
J
R
θJA
- T
θJA
100
20
(t) = r(t) * R
t
A
1
= 85 °C/W
= P * R
t
2
SINGLE PULSE
R
θJA
T
FDS7098N3 Rev C (W)
100
A
= 85°C/W
= 25°C
25
θJA
V
f = 1MHz
θJA
1
GS
(t)
/ t
2
= 0 V
1000
1000
30