FCPF7N60T Fairchild Semiconductor, FCPF7N60T Datasheet - Page 4

• Manufacturer Part Number: FCPF7N60T
• Description: MOSFET N-CH 600V 7A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: SuperFET™r

Specifications of FCPF7N60T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 920pF @ 25V
• Power - Max: 31W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1
Typical Performance Characteristics
Figure 9-1. Maximum Safe Operating Area
Figure 7. Breakdown Voltage Variation
10
10
10.0
10
10
10
7.5
5.0
2.5
0.0
-1
-2
2
1
0
10
Figure 10. Maximum Drain Current
1.2
1.1
1.0
0.9
0.8
25
0
-100
Operation in This Area
is Limited by R
※
1. T
2. T
3. Single Pulse
Notes :
C
J
= 150
= 25
vs. Case Temperature
o
C
o
-50
C
50
DS(on)
vs. Temperature
for FCP7N60
V
DS
T
T
J
10
C
, Drain-Source Voltage [V]
, Junction Temperature [
, Case Temperature [ ]
1
0
75
50
100
DC
10
100
℃
10 ms
2
o
C]
1 ms
※
1. V
2. I
125
100 us
Notes :
D
GS
= 250 μ A
150
= 0 V
150
10
(Continued)
200
3
4
10
10
10
10
10
-1
-2
Figure 8. On-Resistance Variation
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Figure 9-2. Maximum Safe Operating Area
2
1
0
10
-100
0
Operation in This Area
is Limited by R
※
1. T
2. T
3. Single Pulse
Notes :
C
J
= 150
= 25
-50
o
C
o
C
DS(on)
V
vs. Temperature
T
DS
for FCPF7N60
J
10
, Junction Temperature [
, Drain-Source Voltage [V]
0
1
50
DC
100 ms
10
100
10 ms
2
o
C]
1 ms
100 us
※
1. V
2. I
150
www.fairchildsemi.com
Notes :
D
GS
= 3.5 A
= 10 V
200
10
3