FDV301N_D87Z Fairchild Semiconductor, FDV301N_D87Z Datasheet - Page 3

• Manufacturer Part Number: FDV301N_D87Z
• Description: MOSFET N-CH 25V 0.22A SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of FDV301N_D87Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 220mA
• Vgs(th) (max) @ Id: 1.06V @ 250µA
• Gate Charge (qg) @ Vgs: 0.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 9.5pF @ 10V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Electrical Characteristics
0 .5
0 .4
0 .3
0 .2
0 .1
0 .1 5
0 .0 5
0 .2
0 .1
0
1.8
1.6
1.4
1.2
0.8
0.6
0
0
0 .5
1
-50
Figure 1. On-Region Characteristics .
Figure 3.
V
Figure 5. Transfer Characteristics.
V
DS
I = 0.2A
D
GS
= 5.0V
-25
0 .5
= 2.7 V
with Temperature .
V
V
GS
DS
1
On-Resistance Variation
T , JUNCTION TEMPERATURE (°C)
0
V
J
GS
, GATE TO SOURCE VOLTAGE (V)
, DRAIN-SOURCE VOLTAGE (V)
1
= 4.5V
25
1 .5
1 .5
50
4 .0
3 .5
T = -55°C
J
3 .0
75
2
2 .7
2 .5
2
100
25°C
2 .5
2 .0
125°C
125
1 .5
2 .5
3
150
0.0001
0.001
0.01
0.5
0.2
0.1
Variation with Source Current and Temperature.
Figure 4.
1 .4
1 .2
0 .8
0 .6
15
12
9
6
3
0
1
0.2
2
0
V
Figure 6.
V
GS
Figure 2. On-Resistance Variation with
GS
Gate-To-Source Voltage.
= 0V
= 2 .0V
Drain Current and Gate Voltage .
25°C
On Resistance Variation with
V
0.4
0 .1
SD
2.5
V
, BODY DIODE FORW A RD VOLTAGE (V)
Body Diode Forward Voltage
GS
125°C
, GATE TO SOURCE VOLTAGE (V)
I
D
T = 125°C
2 .5
J
0.6
, DRAIN CURRENT (A)
0 .2
2 .7
3
25°C
3 .0
-55°C
0.8
0 .3
3 .5
3.5
4 .0
1
0 .4
I = 0.2A
4 .5
D
FDV301N Rev.F1
1.2
0 .5
4