SSN1N45BBU Fairchild Semiconductor, SSN1N45BBU Datasheet - Page 4

• Manufacturer Part Number: SSN1N45BBU
• Description: MOSFET N-CH 450V 500MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of SSN1N45BBU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.25 Ohm @ 250mA, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 500mA
• Vgs(th) (max) @ Id: 3.7V @ 250µA
• Gate Charge (qg) @ Vgs: 8.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 240pF @ 25V
• Power - Max: 900mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
1.2
1.1
1.0
0.9
0.8
10
10
-1
-2
-3
Figure 9. Maximum Safe Operating Area
-100
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
※ Notes :
1. T
2. T
3. Single Pulse
C
J
T
vs. Temperature
V
= 150
Operation in This Area
is Limited by R
= 25
J
, Junction Temperature [
DS
10
0
, Drain-Source Voltage [V]
o
C
1 0
o
1
1 0
1 0
1 0
C
- 1
2
1
0
1 0
- 5
DS(on)
D = 0 .5
0 . 0 5
0 . 0 2
0 . 0 1
0 . 2
50
0 . 1
DC
Figure 11. Transient Thermal Response Curve
1 s
1 0
100 ms
- 4
100
10
(Continued)
10 ms
o
2
C]
1 ms
※ Notes :
1. V
2. I
100 s
t
D
G S
1 0
1
= 250 μ A
, S q u a r e W a v e P u ls e D u ra tio n [s e c ]
= 0 V
150
- 3
s i n g l e p u ls e
200
1 0
10
3
- 2
1 0
- 1
0.6
0.5
0.4
0.3
0.2
0.1
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
25
1 0
0
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
※ N o te s :
P
1 . Z
2 . D u ty F a c to r, D = t
3 . T
DM
-50
θ J L
J M
50
1 0
- T
(t) = 5 0 ℃ /W M a x .
vs. Case Temperature
L
1
t
= P
1
T
vs. Temperature
t
J
T
2
, Junction Temperature [
D M
C
0
, Case Temperature [ ℃ ]
* Z
75
1 0
1
θ J L
/t
2
2
(t)
50
100
1 0
3
100
o
C]
※ Notes :
125
1. V
2. I
150
D
GS
= 0.25 A
= 10 V
Rev. A, November 2002
150
200