RFD3055 Fairchild Semiconductor, RFD3055 Datasheet

MOSFET N-CH 60V 12A IPAK

RFD3055

Manufacturer Part Number
RFD3055
Description
MOSFET N-CH 60V 12A IPAK
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of RFD3055

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
150 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 20V
Input Capacitance (ciss) @ Vds
300pF @ 25V
Power - Max
53W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Case
TO-252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2002 Fairchild Semiconductor Corporation
12A, 60V, 0.150 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA49082.
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix 9A,
to obtain the TO-252AA variant in tape and reel, i.e. RFD3055SM9A.
Packaging
RFD3055
RFD3055SM
RFP3055
PART NUMBER
DRAIN (FLANGE)
TO-251AA
TO-252AA
TO-220AB
JEDEC TO-251AA
PACKAGE
Data Sheet
SOURCE
FD3055
FD3055
FP3055
DRAIN
GATE
DRAIN (FLANGE)
BRAND
JEDEC TO-220AB
RFD3055, RFD3055SM, RFP3055
Features
• 12A, 60V
• r
• Temperature Compensating PSPICE
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
• Related Literature
Symbol
- TB334 “Guidelines for Soldering Surface Mount
DS(ON)
Components to PC Boards”
o
C Operating Temperature
SOURCE
January 2002
DRAIN
= 0.150 Ω
SOURCE
GATE
GATE
JEDEC TO-252AA
G
RFD3055, RFD3055SM, RFP3055 Rev. B
DRAIN (FLANGE)
D
S
®
Model

Related parts for RFD3055

RFD3055 Summary of contents

Page 1

... RFD3055 TO-251AA RFD3055SM TO-252AA RFP3055 TO-220AB NOTE: When ordering, use the entire part number. Add the suffix 9A, to obtain the TO-252AA variant in tape and reel, i.e. RFD3055SM9A. Packaging JEDEC TO-251AA DRAIN (FLANGE) ©2002 Fairchild Semiconductor Corporation RFD3055, RFD3055SM, RFP3055 Features • ...

Page 2

... Refer to UIS Curve 53 D 0.357 -55 to 175 300 L 260 MIN TYP DSS - - - - - - - 48V,I = 12A Ω 0.24mA - 0.6 - 300 - 100 - MIN TYP - - - - RFD3055, RFD3055SM, RFP3055 Rev. B UNITS MAX UNITS - µ µ 100 nA Ω 0.150 0 2.8 C/W o 100 C/W o 62.5 C/W MAX UNITS 1 ...

Page 3

... IN THIS REGION 10 100 - 100 125 CASE TEMPERATURE ( C) C CASE TEMPERATURE NOTES: DUTY FACTOR PEAK θJC θ FOR TEMPERATURES ABOVE 25 C DERATE PEAK CURRENT CAPABILITY AS FOLLOWS: 175 = * --------------------- 150 = 20V GS = 10V PULSE WIDTH (ms) FIGURE 5. PEAK CURRENT CAPABILITY RFD3055, RFD3055SM, RFP3055 Rev. B 150 175 – ...

Page 4

... DUTY CYCLE = 0.5% MAX V = 10V 12A GS D 2.0 1.5 1.0 0.5 0 -80 - JUNCTION TEMPERATURE ( J RESISTANCE vs JUNCTION TEMPERATURE 2 250µA D 1.5 1.0 0 JUNCTION TEMPERATURE ( J VOLTAGE vs TEMPERATURE RFD3055, RFD3055SM, RFP3055 Rev 4.5V GS 6.0 7.5 120 160 200 o C) 120 160 200 o C) ...

Page 5

... BV DSS DSS R = 5Ω 0.24mA G(REF 10V G(REF) t, TIME (µ G(ACT) CONSTANT GATE CURRENT BV DSS FIGURE 15. UNCLAMPED ENERGY WAVEFORMS d(ON 90% 10% 50% PULSE WIDTH FIGURE 17. RESISTIVE SWITCHING WAVEFORMS RFD3055, RFD3055SM, RFP3055 Rev DSS 7.5 5.0 2 G(REF) I G(ACT OFF t d(OFF 90% 10% 90% 50% ...

Page 6

... Test Circuits and Waveforms g(REF) FIGURE 18. GATE CHARGE TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation (Continued DUT g(REF g(TOT g(10 10V GS Q g(TH) FIGURE 19. GATE CHARGE WAVEFORMS RFD3055, RFD3055SM, RFP3055 Rev 20V GS ...

Page 7

... Fairchild Semiconductor Corporation DPLCAP 10 RSCL2 6 ESG 8 + VTO + EVTO RGATE + LGATE S1A S2A S1B S2B EDS EGS 8 5 LDRAIN RSCL1 DBREAK ESCL RDRAIN DBODY 17 16 EBREAK 18 MOS2 21 MOS1 IN LSOURCE RSOURCE 8 7 RBREAK RFD3055, RFD3055SM, RFP3055 Rev. B DRAIN 2 3 SOURCE RVTO VBAT ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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