FQB9N25CTM Fairchild Semiconductor, FQB9N25CTM Datasheet - Page 7

• Manufacturer Part Number: FQB9N25CTM
• Description: MOSFET N-CH 250V 8.8A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQB9N25CTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 430 mOhm @ 4.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 710pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Package Dimensions
1.27
2.54 TYP
0.10
10.00
9.90
0.20
0.20
2.54 TYP
0.80
0.10
D
2
-PAK
10.00
(2XR0.45)
4.50
(8.00)
(4.40)
0.20
0.20
2.40
0.10
1.30
0.80
0.50
Dimensions in Millimeters
+0.10
–0.05
0.20
0.15
+0.10
–0.05
0.10
Rev. A, March 2004