HUF75617D3ST Fairchild Semiconductor, HUF75617D3ST Datasheet - Page 3

• Manufacturer Part Number: HUF75617D3ST
• Description: MOSFET N-CH 100V 16A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75617D3ST

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 20V
• Input Capacitance (ciss) @ Vds: 570pF @ 25V
• Power - Max: 64W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
1.2
1.0
0.8
0.6
0.4
0.2
100
300
200
0
10
0
0.01
10
0.1
2
1
-5
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-5
TEMPERATURE
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
25
T
50
C
, CASE TEMPERATURE (
V
GS
SINGLE PULSE
10
75
= 10V
10
-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-4
100
125
o
C)
FIGURE 4. PEAK CURRENT CAPABILITY
10
10
150
-3
-3
t, RECTANGULAR PULSE DURATION (s)
175
t, PULSE WIDTH (s)
10
10
-2
-2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
18
15
12
9
6
3
0
25
50
CASE TEMPERATURE
10
10
T
-1
C
-1
, CASE TEMPERATURE (
NOTES:
DUTY FACTOR: D = t
PEAK T
75
J
= P
100
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
T
C
I = I
DM
= 25
25
x Z
o
10
10
C
P
JC
125
DM
o
1
0
0
C DERATE PEAK
/t
x R
2
o
175 - T
C)
V
150
GS
JC
t
HUF75617D3 Rev. B
1
+ T
= 10V
150
t
C
2
C
175
10
10
1
1