HUF75333S3 Fairchild Semiconductor, HUF75333S3 Datasheet

MOSFET N-CH 55V 60A TO-262AA

HUF75333S3

Manufacturer Part Number
HUF75333S3
Description
MOSFET N-CH 55V 60A TO-262AA
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Datasheet

Specifications of HUF75333S3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16 mOhm @ 66A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
85nC @ 20V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.016 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
66 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HUF75333S3
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
HUF75333S3S
Manufacturer:
HARRIS
Quantity:
60 000
Part Number:
HUF75333S3ST
Manufacturer:
HARRIS
Quantity:
20 000
Company:
Part Number:
HUF75333S3ST
Quantity:
50 000
©2003 Fairchild Semiconductor Corporation
66A, 55V, 0.016 Ohm. N-Channel UltraFET
Power MOSFETs
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching convertors, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products. .
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75333S3ST.
Packaging
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
HUF75333G3
HUF75333P3
HUF75333S3S
HUF75333S3
PART NUMBER
DRAIN
(TAB)
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
SOURCE
GATE
JEDEC STYLE TO-247
TO-247
TO-220AB
TO-263AB
TO-262AA
JEDEC TO-263AB
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
PACKAGE
Data Sheet
For severe environments, see our Automotive HUFA series.
(FLANGE)
SOURCE
DRAIN
75333G
75333P
75333S
75333S
DRAIN
HUF75333G3, HUF75333P3, HUF75333S3S,
BRAND
GATE
Features
• 66A, 55V
• Simulation Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
Formerly developmental type TA75333
Symbol
- Temperature Compensated PSPICE® and SABER™
- SPICE and SABER Thermal Impedance Models
- TB334, “Guidelines for Soldering Surface Mount
Models
Available on the WEB at: www.fairchildsemi.com
Components to PC Boards”
December 2001
(FLANGE)
(FLANGE)
DRAIN
DRAIN
HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 Rev. B1
JEDEC TO-262ABA
JEDEC TO-220AB
G
D
S
HUF75333S3
SOURCE
DRAIN
GATE
SOURCE
DRAIN
GATE

Related parts for HUF75333S3

HUF75333S3 Summary of contents

Page 1

... HUF75333G3 TO-247 HUF75333P3 TO-220AB HUF75333S3S TO-263AB HUF75333S3 TO-262AA NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75333S3ST. Packaging JEDEC STYLE TO-247 DRAIN (TAB) JEDEC TO-263AB GATE (FLANGE) SOURCE Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html For severe environments, see our Automotive HUFA series ...

Page 2

... OFF 20V V g(TOT 10V g(10 g(TH) GS (Figure 13 Figure 4 Figures 6, 14, 15 150 1 -55 to 175 300 260 MIN TYP 150 0.013 - - - - - - - - - 30V 66A 0.455 L = 1.0mA - 2.5 g(REF HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 Rev. B1 UNITS MAX UNITS - 250 A 100 0.016 C/W 100 3 ...

Page 3

... C) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION (s) MIN TYP - 1300 - 480 - 115 MIN TYP - - - - - - 100 125 CASE TEMPERATURE ( C CASE TEMPERATURE P DM NOTES: DUTY FACTOR PEAK HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 Rev. B1 MAX UNITS - MAX UNITS 1. 140 nC 150 175 ...

Page 4

... STARTING T o STARTING T = 150 0.001 0.01 0 TIME IN AVALANCHE (ms) AV 150 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX V = 15V DD 120 1.5 3.0 4 GATE TO SOURCE VOLTAGE (V) GS FIGURE 8. TRANSFER CHARACTERISTICS HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 Rev. B1 175 - T C 150 +1] DSS - 175 C 6.0 7.5 ...

Page 5

... GATE CHARGE (nC 1.0 0.8 0.6 0.4 -80 - JUNCTION TEMPERATURE ( J JUNCTION TEMPERATURE 2000 1500 C ISS 1000 C OSS 500 C RSS DRAIN TO SOURCE VOLTAGE (V) DS WAVEFORMS IN DESCENDING ORDER 66A 50A 33A 16A HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 Rev 250 120 160 200 0V 1MHz ISS RSS OSS ...

Page 6

... Fairchild Semiconductor Corporation DUT 0. DUT g(REF DUT DSS FIGURE 15. UNCLAMPED ENERGY WAVEFORMS Q g(TOT g(10 10V g(TH FIGURE 17. GATE CHARGE WAVEFORM d(ON 90% 10% 50% PULSE WIDTH FIGURE 19. RESISTIVE SWITCHING WAVEFORMS HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 Rev 20V GS t OFF d(OFF 90% 10% 90% 50% ...

Page 7

... ESG 8 EVTHRES + - + 19 LGATE EVTEMP 8 RGATE - + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN EBREAK MWEAK MMED MSTRO LSOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 Rev. B1 DRAIN 2 SOURCE 3 ...

Page 8

... EVTEMP GATE RGATE - + RLGATE S1A S2A S1B S2B EGS RSLC1 RDBREAK 51 72 ISCL DBREAK 50 71 RDRAIN MWEAK 8 EBREAK MMED + MSTRO CIN 8 7 RSOURCE RLSOURCE RBREAK RVTEMP EDS + RVTHRES HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 Rev. B1 LDRAIN DRAIN 2 RLDRAIN RDBODY DBODY LSOURCE SOURCE 3 VBAT ...

Page 9

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 Rev. B1 ...

Page 10

CROSSVOLT â â â â â Rev. I2 ...

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