FQAF34N25 Fairchild Semiconductor, FQAF34N25 Datasheet - Page 4

• Manufacturer Part Number: FQAF34N25
• Description: MOSFET N-CH 250V 21.7A TO-3PF
• Manufacturer: Fairchild Semiconductor

Specifications of FQAF34N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 85 mOhm @ 10.9A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 21.7A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 2750pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-3PF-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
10
10
-100
Figure 9. Maximum Safe Operating Area.
-1
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
V
vs Temperature.
J
DS
, Junction Temperature [
Operation in This Area
is Limited by R
0
, Drain-Source Voltage [V]
※ Notes :
1 0
1 0
1 0
10
1. T
2. T
3. Single Pulse
1
- 1
- 2
0
1 0
C
J
= 150
= 25
D = 0 .5
- 5
DS(on)
o
C
50
DC
o
C
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
10 ms
Figure 11. Transient Thermal Response Curve.
1 ms
100
1 0
(Continued)
o
C]
- 4
100 s
s i n g l e p u ls e
10
※ Notes :
1. V
2. I
t
2
1
D
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
G S
= 250 μ A
10 s
= 0 V
150
1 0
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
20
15
10
-100
5
0
25
Figure 8. On-Resistance Variation
※ N o t e s :
1 0
Figure 10. Maximum Drain Current
1 . Z
2 . D u t y F a c t o r , D = t
3 . T
- 1
P
-50
DM
θ J C
J M
50
- T
( t ) = 1 . 2 5 ℃ / W M a x .
vs Case Temperature.
C
= P
T
vs Temperature.
J
T
t
, Junction Temperature [
1
C
0
D M
t
1 0
, Case Temperature [ ℃ ]
2
* Z
0
75
1
/ t
θ
2
J C
( t )
50
100
1 0
1
100
o
C]
※ Notes :
125
1. V
2. I
150
D
GS
= 17 A
= 10 V
Rev. A, October 2001
150
200