IRFS634B_FP001 Fairchild Semiconductor, IRFS634B_FP001 Datasheet - Page 3

• Manufacturer Part Number: IRFS634B_FP001
• Description: MOSFET N-CH 250V 8.1A TO-220F
• Manufacturer: Fairchild Semiconductor

Specifications of IRFS634B_FP001

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 4.05A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 8.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 25V
• Power - Max: 38W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
2000
1500
1000
500
10
2.5
2.0
1.5
1.0
0.5
0.0
10
10
0
-1
10
1
0
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs
Top :
Bottom :
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
GS
6
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
I
10
D
, Drain Current [A]
0
0
12
C
C
C
rss
oss
iss
V
V
GS
GS
= 20V
= 10V
18
C
C
C
※ Notes :
iss
oss
rss
1. 250μ s Pulse Test
2. T
10
10
= C
= C
= C
※ Note : T
1
1
C
gs
gd
ds
= 25℃
+ C
+ C
24
※ Notes :
gd
1. V
2. f = 1 MHz
gd
(C
J
GS
ds
= 25 ℃
= shorted)
= 0 V
30
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.2
0
2
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
25
Variation with Source Current
0.4
150
o
C
5
o
C
150℃
4
0.6
V
V
and Temperature
Q
GS
SD
10
G
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
25℃
-55
V
DS
0.8
o
C
V
= 200V
DS
15
6
= 125V
V
DS
1.0
= 50V
20
1.2
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250 μ s Pulse Test
※ Note : I
8
DS
GS
= 40V
= 0V
25
D
1.4
= 8.1 A
Rev. A, November 2001
1.6
10
30