FFPF60B150DSTU Fairchild Semiconductor, FFPF60B150DSTU Datasheet

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... Average Rectified Forward Current F(AV) I Non-repetitive Peak Surge Current FSM T T Operating Junction and Storage Temperature J, STG Thermal Characteristics Symbol R Maximum Thermal Resistance, Junction to Case JC ©2001 Fairchild Semiconductor Corporation FFPF60B150DS TO-220F =25 C unless otherwise noted C Parameter @ T = 100 C C 60Hz Single Half-Sine Wave T ...

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... RM t Maximum Reverse Recovery Time rr (I =1.0A, di/dt = 50A Maximum Forward Recovery Time fr (I =6.5A, di/dt = 50A Maximum Forward Recovery Voltage FRM * Pulse Test: Pulse Width=300 s, Duty Cycle 2% ©2001 Fairchild Semiconductor Corporation T =25 C unless otherwise noted C Parameter I = 20A 20A T = 100 rated V ...

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... Reverse Voltage , V Figure 3. Typical Reverse Current vs. Reverse Voltage (Modulation Diode) 200 150 100 50 1 0.1 1 Reverse Voltage , V Figure 5. Typical Junction Capacitance (Modulation Diode) ©2001 Fairchild Semiconductor Corporation 0.1 0.0 2.0 2.5 3.0 [V] F Figure 2. Typical Forward Characteristics 100 10 ...

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... Diode 100 di/dt [A/us] Figure 9. Typical Reverse Recovery Current vs. di/dt (Modulation Diode 100 120 Case Temperature , T Figure 11. Forward Current Derating Curve (Modulation Diode) ©2001 Fairchild Semiconductor Corporation 400 I = 20A 300 200 100 0 500 1 Figure 8. Typical Reverse Recovery Time 20A ...

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... Package Dimensions MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 0.20 ©2001 Fairchild Semiconductor Corporation TO-220F 10.16 ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 0.50 2.54TYP ] [2.54 ] 0.20 9.40 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, March 2001 ...

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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ HiSeC™ ...