JFET AMP N-CH RF SS TO-92

MPF102

Manufacturer Part NumberMPF102
DescriptionJFET AMP N-CH RF SS TO-92
ManufacturerFairchild Semiconductor
MPF102 datasheet
 

Specifications of MPF102

Transistor TypeN-Channel JFETVoltage - Rated25V
Current Rating20mAPackage / CaseTO-92-3 (Standard Body), TO-226
Transistor PolarityN-ChannelForward Transconductance Gfs (max / Min)0.002 S to 0.0075 S
Gate-source Cutoff Voltage- 8 VGate-source Breakdown Voltage- 25 V
Maximum Drain Gate Voltage25 VDrain Current (idss At Vgs=0)8 mA to 80 mA
Power Dissipation350 mWMaximum Operating Temperature+ 155 C
ConfigurationSingleMinimum Operating Temperature- 55 C
Mounting StyleSMD/SMTLead Free Status / RoHS StatusLead free / RoHS Compliant
Power - Output-Frequency-
Gain-Noise Figure-
Current - Test-Voltage - Test-
Other namesECG132
F10015M
  
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N-Channel RF Amplifier
• This device is designed for electronic switching applications such as
low ON resistance analog switching.
• Sourced from process 50.
Absolute Maximum Ratings *
Symbol
V
Drain-Gate Voltage
DG
V
Gate-Source Voltage
GS
I
Forward Gate Current
GF
T
, T
Operating and Storage Junction Temperature Range
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
Symbol
Parameter
Off Characteristics
V
Gate-Source Breakdown Voltage
(BR)GSS
I
Gate Reverse Current
GSS
V
Gate-Source Cutoff Voltage
gs(off)
V
Gate-Source Voltage
gs
On Characteristics *
I
Zero-Gate Voltage Drain Current
DSS
g
Forward Transconductance
fs
Small Signal Characteristics
C
Common-Source Input Capacitance
iss
C
Common-Source Reverse Transfer
rss
Capacitance
Thermal Characteristics
Symbol
P
Total Device Dissipation
D
Derate above 25 C
R
Thermal Resistance, Junction to Case
JC
R
Thermal Resistance, Junction to Ambient
JA
©2004 Fairchild Semiconductor Corporation
MPF102
T
=25 C unless otherwise noted
a
Parameter
T
=25 C unless otherwise noted
a
Test Condition
I
= -1.0 A, V
G
DS
V
= -15V, V
GS
DS
V
= 15V, I
= 2nA
DS
D
V
= 15V, I
= 200 A
DS
D
V
= 15V, V
DS
GS
V
= 0V, V
= 15V, f = 1kHz
GS
DS
V
= 0, V
= 15V, f = 1MHz
GS
DS
V
= 0, V
= 15V, f = 1MHz
GS
DS
T
=25 C unless otherwise noted
a
Parameter
TO-92
1
1. Drain 2. Source 3. Gate
Value
Units
25
V
-25
V
10
mA
- 55 ~ +155
C
Min.
Max.
Units
= 0
-25
= 0
-2.0
-8.0
-0.5
-7.5
= 0
2.0
20
mA
2000
7500
7.0
3.0
Max.
Units
350
mW
2.8
mW/ C
125
C/W
357
C/W
Rev. B, October 2004
V
nA
V
V
S
pF
pF

MPF102 Summary of contents

  • Page 1

    ... C Common-Source Reverse Transfer rss Capacitance Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2004 Fairchild Semiconductor Corporation MPF102 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition -15V ...

  • Page 2

    ... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2004 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. B, October 2004 ...

  • Page 3

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A CEx™ FAST FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ ...