BLF2045,112 NXP Semiconductors, BLF2045,112 Datasheet - Page 2

• Manufacturer Part Number: BLF2045,112
• Description: TRANSISTOR RF LDMOS SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLF2045,112

• Package / Case: SOT467C
• Transistor Type: LDMOS
• Frequency: 2GHz
• Gain: 10dB
• Voltage - Rated: 65V
• Current Rating: 4.5A
• Current - Test: 180mA
• Voltage - Test: 26V
• Power - Output: 30W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.34 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 4.5 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: UHF
• Channel Type: N
• Drain Source Voltage (max): 65V
• Output Power (max): 30W
• Power Gain (typ)@vds: 10(Min)@26VdB
• Frequency (min): 1.8GHz
• Frequency (max): 2.2GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 2S
• Drain Source Resistance (max): 340(Typ)@12.5Vmohm
• Input Capacitance (typ)@vds: 38@26VpF
• Output Capacitance (typ)@vds: 31@26VpF
• Reverse Capacitance (typ): 1.7@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 30(Max)%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2387; 934055383112; BLF2045; BLF2045

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
30 W LDMOS power transistor for base station
applications at frequencies from 1800 to 2200 MHz.
ORDERING INFORMATION
QUICK REFERENCE DATA
RF performance at T
2004 Feb 11
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
BLF2045
2-tone, class-AB
MODE OF OPERATION
Typical 2-tone performance at a supply voltage of 26 V
and I
– Output power = 30 W (PEP)
– Gain = 12.5 dB
– Efficiency = 32%
– d
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (1800 to 2200 MHz)
No internal matching for broadband operation.
RF power amplifiers for GSM, EDGE, CDMA and
W-CDMA base stations and multicarrier applications in
the 1800 to 2200 MHz frequency range
Broadcast drivers.
UHF power LDMOS transistor
TYPE NUMBER
im
DQ
= 26 dBc.
of 500 mA
h
= 25 C in a common source test circuit.
f
1
= 2000; f
NAME
f (MHz)
2
= 2000.1
plastic surface mounted package; 3 leads
CAUTION
V
DS
26
2
(V)
PINNING
DESCRIPTION
30 (PEP)
PACKAGE
PIN
P
1
2
3
L
(W)
Fig.1 Simplified outline.
drain
gate
source, connected to flange
Top view
G
p
>10
(dB)
1
2
DESCRIPTION
MBK584
Product specification
3
D
>30
(%)
BLF2045
VERSION
SOT467C
d
im
(dBc)
25