BLF2045,112 NXP Semiconductors, BLF2045,112 Datasheet - Page 5

• Manufacturer Part Number: BLF2045,112
• Description: TRANSISTOR RF LDMOS SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLF2045,112

• Package / Case: SOT467C
• Transistor Type: LDMOS
• Frequency: 2GHz
• Gain: 10dB
• Voltage - Rated: 65V
• Current Rating: 4.5A
• Current - Test: 180mA
• Voltage - Test: 26V
• Power - Output: 30W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.34 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 4.5 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: UHF
• Channel Type: N
• Drain Source Voltage (max): 65V
• Output Power (max): 30W
• Power Gain (typ)@vds: 10(Min)@26VdB
• Frequency (min): 1.8GHz
• Frequency (max): 2.2GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 2S
• Drain Source Resistance (max): 340(Typ)@12.5Vmohm
• Input Capacitance (typ)@vds: 38@26VpF
• Output Capacitance (typ)@vds: 31@26VpF
• Reverse Capacitance (typ): 1.7@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 30(Max)%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2387; 934055383112; BLF2045; BLF2045

Philips Semiconductors
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
Ruggedness in class-AB operation
The BLF2045 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V
2004 Feb 11
handbook, halfpage
2-tone, class-AB
MODE OF OPERATION
UHF power LDMOS transistor
Class-AB operation; V
f
Fig.3
1
= 2000 MHz; f
(dB)
G p
20
16
12
8
4
0
0
Power gain and efficiency as functions of
peak envelope load power; typical values.
G p
2
D
10
= 2000.1 MHz.
DS
DS
= 26 V; I
20
= 26 V; P
f
1
DQ
= 2000; f
= 180 mA;
30
L
f (MHz)
= 30 W (CW); f = 2000 MHz.
P L (PEP) (W)
2
40
= 2000.1
MCD890
50
50
40
30
20
10
0
(%)
D
V
DS
26
h
(V)
= 25 C; R
5
I
DQ
180
(mA)
th(mb-h)
30 (PEP)
= 0.65 K/W, unless otherwise specified.
P
L
(W)
G
p
>10
(dB)
Product specification
>30
D
(%)
BLF2045
(dBc)
d
im
25