MMBFJ305 Fairchild Semiconductor, MMBFJ305 Datasheet
MMBFJ305
Manufacturer Part Number
MMBFJ305
Description
IC SWITCH RF SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.J305.pdf
(2 pages)
Specifications of MMBFJ305
Transistor Type
N-Channel JFET
Voltage - Rated
30V
Current Rating
8mA
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Frequency
-
Gain
-
Noise Figure
-
Current - Test
-
Voltage - Test
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBFJ305
Manufacturer:
Fairchild Semiconductor
Quantity:
135
Company:
Part Number:
MMBFJ305
Manufacturer:
VISHAY
Quantity:
1 260
J305 Rev. 1.0.0
© 2007 Fairchild Semiconductor Corporation
J305
N-Channel RF Amplifier
• This device is designed primarily for electronic switching applications such as low on resistance analog switching.
• Sourced from process 50.
Absolute Maximum Ratings*
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Electrical Characteristics*
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle = 2%
V
V
I
T
P
R
R
Off Characteristics
V
I
V
V
On Characteristics
*I
Small Signal Characteristics
g
GF
Symbol
GSS
fs
J
DG
GS
D
(BR)GSS
GS(off)
GS
DSS
θJC
θJA
Symbol
, T
Symbol
STG
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cut-off Voltage
Gate-Source Forward Voltage
Zero-Gate Voltage Drain Current *
Forward Transferconductance
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Parameter
T
a
T
=25°C unless otherwise noted
a
=25°C unless otherwise noted
T
Parameter
Parameter
a
=25°C unless otherwise noted
1. Gate 2. Source 3. Drain
1
I
V
V
V
V
V
1
G
GS
DS
DS
DS
DS
TO-92
= 1.0μA, V
= 20V, V
= 15V, I
= 15V, I
= 15V, V
= 15V, V
Test Condition
D
D
DS
DS
GS
GS
= 100nA
= 0.2mA
= 0
= 0
= 0
= 0V
-55 ~ +150
Value
Max.
350
125
357
-30
2.8
30
10
Min.
3000
-0.5
-1.5
-30
1
Max.
-100
-4.0
September 2007
-3
8
www.fairchildsemi.com
Units
Units
mW/°C
°C/W
°C/W
mW
mA
°C
V
V
Units
μ/Ω
mA
pA
V
V
V
Related parts for MMBFJ305
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
MMBFJ305 Summary of contents
Page 1
... GS On Characteristics *I Zero-Gate Voltage Drain Current * DSS Small Signal Characteristics g Forward Transferconductance fs * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle = 2% © 2007 Fairchild Semiconductor Corporation J305 Rev. 1.0.0 TO- Gate 2. Source 3. Drain T =25°C unless otherwise noted a Parameter T =25°C unless otherwise noted ...
Page 2
... TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ ® ...