BLF2043F,112 NXP Semiconductors, BLF2043F,112 Datasheet - Page 8

TRANSISTOR RF LDMOS SOT467C

BLF2043F,112

Manufacturer Part Number
BLF2043F,112
Description
TRANSISTOR RF LDMOS SOT467C
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF2043F,112

Package / Case
SOT467C
Transistor Type
LDMOS
Frequency
2.2GHz
Gain
11dB
Voltage - Rated
65V
Current Rating
2.2A
Current - Test
85mA
Voltage - Test
26V
Power - Output
10W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.2 Ohmss
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
2.2 A
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056375112
BLF2043F
BLF2043F
Philips Semiconductors
2002 Mar 05
handbook, full pagewidth
UHF power LDMOS transistor
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (
The other side is unetched and serves as a ground plane.
60
Fig.11 Component layout for 2.2 GHz class-AB test circuit.
BLF2043F 2.2 GHz input
BLF2043F 2.2 GHz input
C1
C2
C3
V gate
33
R3
C4
C6
C5
8
BLF2043F 2.2 GHz output
BLF2043F 2.2 GHz output
C7
C19
C8
C20
V DD
33
C18
C11 C12
C9
r
C17
= 2.2), thickness 0.51 mm.
L10
C10
MGU555
60
Product specification
BLF2043F

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