TRANS PNP 15V 1000MA SOT666

PBSS3515VS,115

Manufacturer Part NumberPBSS3515VS,115
DescriptionTRANS PNP 15V 1000MA SOT666
ManufacturerNXP Semiconductors
PBSS3515VS,115 datasheet
 


Specifications of PBSS3515VS,115

Package / CaseSS Mini-6 (SOT-666)Transistor Type2 PNP (Dual)
Current - Collector (ic) (max)500mAVoltage - Collector Emitter Breakdown (max)15V
Vce Saturation (max) @ Ib, Ic250mV @ 50mA, 500mADc Current Gain (hfe) (min) @ Ic, Vce150 @ 100mA, 2V
Power - Max200mWFrequency - Transition280MHz
Mounting TypeSurface MountMinimum Operating Temperature- 65 C
ConfigurationDualTransistor PolarityPNP
Mounting StyleSMD/SMTCollector- Emitter Voltage Vceo Max15 V
Emitter- Base Voltage Vebo6 VMaximum Dc Collector Current0.5 A
Power Dissipation200 mWMaximum Operating Frequency280 MHz
Maximum Operating Temperature+ 150 CLead Free Status / RoHS StatusLead free / RoHS Compliant
Current - Collector Cutoff (max)-Other names934056767115
PBSS3515VS T/R
PBSS3515VS T/R
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DATA SHEET
PBSS3515VS
15 V low V
transistor
Product data sheet
Supersedes data of 2001 Nov 07
DISCRETE SEMICONDUCTORS
M3D744
PNP double
CE(sat)
2004 Dec 23

PBSS3515VS,115 Summary of contents

  • Page 1

    DATA SHEET PBSS3515VS 15 V low V transistor Product data sheet Supersedes data of 2001 Nov 07 DISCRETE SEMICONDUCTORS M3D744 PNP double CE(sat) 2004 Dec 23 ...

  • Page 2

    ... NXP Semiconductors 15 V low V PNP double transistor CE(sat) FEATURES • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Self alignment during soldering due to straight leads • Low collector-emitter saturation voltage • High current capability • Improved thermal behaviour due to flat leads • ...

  • Page 3

    ... NXP Semiconductors 15 V low V PNP double transistor CE(sat) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per transistor unless otherwise specified V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current ...

  • Page 4

    ... NXP Semiconductors 15 V low V PNP double transistor CE(sat) CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER Per transistor unless otherwise specified I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation CEsat voltage R equivalent on-resistance CEsat V base-emitter saturation voltage ...

  • Page 5

    ... NXP Semiconductors 15 V low V PNP double transistor CE(sat) 600 handbook, halfpage h FE (1) 400 (2) 200 (3) 0 −1 −10 −1 −10 = − 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain as a function of collector current; typical values. −10 ...

  • Page 6

    ... NXP Semiconductors 15 V low V PNP double transistor CE(sat handbook, halfpage R CEsat (Ω −1 10 −1 −10 −1 − 20 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.6 Equivalent on-resistance as a function of collector current; typical values. 2004 Dec 23 MLD654 −1200 ...

  • Page 7

    ... NXP Semiconductors 15 V low V PNP double transistor CE(sat) PACKAGE OUTLINE Plastic surface-mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 2004 Dec scale 1.3 1.7 0.3 1.0 ...

  • Page 8

    ... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

  • Page 9

    ... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...