PBSS3515VS,115 NXP Semiconductors, PBSS3515VS,115 Datasheet - Page 6

• Manufacturer Part Number: PBSS3515VS,115
• Description: TRANS PNP 15V 1000MA SOT666
• Manufacturer: NXP Semiconductors

Specifications of PBSS3515VS,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 100mA, 2V
• Power - Max: 200mW
• Frequency - Transition: 280MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 280 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056767115; PBSS3515VS T/R; PBSS3515VS T/R

NXP Semiconductors
2004 Dec 23
handbook, halfpage
15 V low V
R CEsat
I
(1) T
(2) T
(3) T
Fig.6
C
/I
(Ω)
B
10
10
10
= 20.
10
−10
−1
amb
amb
amb
1
3
2
−1
= 150 °C.
= 25 °C.
= −55 °C.
Equivalent on-resistance as a function of
collector current; typical values.
−1
CE(sat)
−10
PNP double transistor
(2)
−10
(1)
(3)
2
I C (mA)
MLD654
−10
3
6
handbook, halfpage
T
(1) I
(2) I
(3) I
(4) I
(5) I
Fig.7
−1200
amb
(mA)
−800
−400
I C
B
B
B
B
B
= 25 °C.
0
= −7 mA.
= −6.3 mA.
= −5.6 mA.
= −4.9 mA.
= −4.2 mA.
0
Collector current as a function of
collector-emitter voltage; typical values.
−2
(6) I
(7) I
(8) I
(9) I
(10) I
B
B
B
B
B
−4
= −3.5 mA.
= −2.8 mA.
= −2.1 mA.
= −1.4 mA.
= −0.7 mA.
(4)
−6
(3)
PBSS3515VS
(2)
Product data sheet
−8
(10)
V CE (V)
(1)
(5)
(6)
(7)
(8)
(9)
MLD650
−10