PBSS3515VS,115 NXP Semiconductors, PBSS3515VS,115 Datasheet - Page 9

• Manufacturer Part Number: PBSS3515VS,115
• Description: TRANS PNP 15V 1000MA SOT666
• Manufacturer: NXP Semiconductors

Specifications of PBSS3515VS,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 100mA, 2V
• Power - Max: 200mW
• Frequency - Transition: 280MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 280 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056767115; PBSS3515VS T/R; PBSS3515VS T/R

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NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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R75/03/pp9
Date of release: 2004 Dec 23
Document order number: 9397 750 14427