PBSS3515VS,115 NXP Semiconductors, PBSS3515VS,115 Datasheet
PBSS3515VS,115
Specifications of PBSS3515VS,115
PBSS3515VS T/R
PBSS3515VS T/R
Available stocks
Related parts for PBSS3515VS,115
PBSS3515VS,115 Summary of contents
Page 1
DATA SHEET PBSS3515VS 15 V low V transistor Product data sheet Supersedes data of 2001 Nov 07 DISCRETE SEMICONDUCTORS M3D744 PNP double CE(sat) 2004 Dec 23 ...
Page 2
... NXP Semiconductors 15 V low V PNP double transistor CE(sat) FEATURES • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Self alignment during soldering due to straight leads • Low collector-emitter saturation voltage • High current capability • Improved thermal behaviour due to flat leads • ...
Page 3
... NXP Semiconductors 15 V low V PNP double transistor CE(sat) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per transistor unless otherwise specified V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current ...
Page 4
... NXP Semiconductors 15 V low V PNP double transistor CE(sat) CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER Per transistor unless otherwise specified I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation CEsat voltage R equivalent on-resistance CEsat V base-emitter saturation voltage ...
Page 5
... NXP Semiconductors 15 V low V PNP double transistor CE(sat) 600 handbook, halfpage h FE (1) 400 (2) 200 (3) 0 −1 −10 −1 −10 = − 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain as a function of collector current; typical values. −10 ...
Page 6
... NXP Semiconductors 15 V low V PNP double transistor CE(sat handbook, halfpage R CEsat (Ω −1 10 −1 −10 −1 − 20 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.6 Equivalent on-resistance as a function of collector current; typical values. 2004 Dec 23 MLD654 −1200 ...
Page 7
... NXP Semiconductors 15 V low V PNP double transistor CE(sat) PACKAGE OUTLINE Plastic surface-mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 2004 Dec scale 1.3 1.7 0.3 1.0 ...
Page 8
... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
Page 9
... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...