2N5210BU Fairchild Semiconductor, 2N5210BU Datasheet - Page 6

• Manufacturer Part Number: 2N5210BU
• Description: IC TRANS NPN SS GP 100MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of 2N5210BU

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 100µA, 5V
• Power - Max: 625mW
• Frequency - Transition: 30MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 4.5 V
• Continuous Collector Current: 0.1 A
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 625 mW
• Maximum Operating Frequency: 30 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 200
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2N5210; S0024M

Typical Common Emitter Characteristics
Typical Common Emitter Characteristics
1.4
1.3
1.2
1.1
0.9
0.8
1
0
h
h
h
re
ie
fe
h
oe
5
V
CE
- COLLECTOR VOLTAGE (V)
10
Typical Common Emitter Characteristics
0.01
100
15
0.1
10
1
0.1 0.2
h
h
f = 1.0kHz
h
oe
fe
ie
and h
20
I = 1.0mA
f = 1.0kHz
T = 25 C
C
A
I - COLLECTOR CURRENT (mA)
re
C
0.5
h
h
h
h
oe
fe
ie
re
°
1
25
2
5
Typical Common Emitter Characteristics
h
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0.6
0.5
h
ie
1
-100
oe
10
(f = 1.0 kHz)
NPN General Purpose Amplifier
I = 1.0mA
V
f = 1.0kHz
C
CE
20
h
h
h
= 5.0V
h
h
oe
fe
fe
re
T - JUNCTIO N TEMP ERATURE ( C)
re
-50
J
50
h
100
ie
0
50
h
ie
100
°
h
h
h
oe
re
fe
(continued)
150
3