MJE350STU Fairchild Semiconductor, MJE350STU Datasheet
MJE350STU
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MJE350STU Summary of contents
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... J T Storage Temperature STG Electrical Characteristics Symbol Parameter BV Collector-Emitter Breakdown Voltage CEO I Collector Cut-off Current CBO I Emitter Cut-off Current EBO h DC Current Gain FE ©2001 Fairchild Semiconductor Corporation MJE350 T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition 1mA 300V, I ...
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... Typical Characteristics 1000 100 -10 I [A], COLLECTOR CURRENT C Figure 1. DC current Gain -10000 -1000 -100 -10 -10 -100 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 3. Safe Operating Area ©2001 Fairchild Semiconductor Corporation - 10V CE -1 -0.1 -0.01 -1 -100 -1000 Figure 2. Base-Emitter Saturation Voltage -1000 I = 10I (sat (sat) ...
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... Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2001 Fairchild Semiconductor Corporation TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A1, February 2001 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ CMOS™ EnSigna™ FACT™ FACT Quiet Series™ ...