MJE350STU Fairchild Semiconductor, MJE350STU Datasheet
Home Discrete Semiconductor Products Transistors (BJT) - Single MJE350STU
Manufacturer Part Number
MJE350STU
Description
TRANSISTOR PNP 300V 500MA TO-126
Manufacturer
Fairchild Semiconductor
Specifications of MJE350STU
Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
300V
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 50mA, 10V
Power - Max
20W
Mounting Type
Through Hole
Package / Case
TO-126-3
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
300 V
Emitter- Base Voltage Vebo
- 5 V
Maximum Dc Collector Current
0.5 A
Power Dissipation
20 W
Dc Collector/base Gain Hfe Min
30
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Vce Saturation (max) @ Ib, Ic
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Manufacturer:
ON/安森美
©2001 Fairchild Semiconductor Corporation
High Voltage General Purpose Applications
• High Collector-Emitter Breakdown Voltage
• Suitable for Transformer
• Complement to MJE340
..PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
V
I
P
T
I
h
V
V
T
BV
I
C
EBO
CBO
FE
J
EBO
C
STG
CBO
CEO
Symbol
Symbol
CEO
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
C
T
=25 C)
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
MJE350
I
V
V
V
C
CB
BE
CE
= - 1mA, I
= - 300V, I
= - 3V, I
= - 10V, I
Test Condition
C
B
C
= 0
= 0
E
= - 50mA
= 0
1
1. Emitter
- 65 ~ 150
Value
- 300
- 300
- 500
150
2.Collector
20
- 5
Min.
-300
30
TO-126
Max.
-100
-100
240
3.Base
Rev. A1, February 2001
Units
mA
W
Units
V
V
V
C
C
V
A
A
Related parts for MJE350STU
MJE350STU Summary of contents
... J T Storage Temperature STG Electrical Characteristics Symbol Parameter BV Collector-Emitter Breakdown Voltage CEO I Collector Cut-off Current CBO I Emitter Cut-off Current EBO h DC Current Gain FE ©2001 Fairchild Semiconductor Corporation MJE350 T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition 1mA 300V, I ...
... Typical Characteristics 1000 100 -10 I [A], COLLECTOR CURRENT C Figure 1. DC current Gain -10000 -1000 -100 -10 -10 -100 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 3. Safe Operating Area ©2001 Fairchild Semiconductor Corporation - 10V CE -1 -0.1 -0.01 -1 -100 -1000 Figure 2. Base-Emitter Saturation Voltage -1000 I = 10I (sat (sat) ...
... Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2001 Fairchild Semiconductor Corporation TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A1, February 2001 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ CMOS™ EnSigna™ FACT™ FACT Quiet Series™ ...
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