2N5771 Fairchild Semiconductor, 2N5771 Datasheet - Page 2

• Manufacturer Part Number: 2N5771
• Description: IC TRANS PNP SS HS 200MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of 2N5771

• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 50mA
• Current - Collector Cutoff (max): 10nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 10mA, 300mV
• Power - Max: 350mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 4.5 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 8.5 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 50
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

OFF CHARACTERISTICS
ON CHARACTERISTICS*
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
V
V
V
V
I
I
I
h
V
V
C
C
h
t
t
t
Symbol
CBO
CES
EBO
s
on
off
FE
fe
*
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
CE(
BE(
cb
eb
Electrical Characteristics
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
sat
sat
)
)
Collector-Emitter Breakdown Voltage*
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Capacitance
Emitter-Base Capacitance
Small-Signal Current Gain
Storage Time
Turn-On Time
Turn-Off Time
Parameter
TA = 25°C unless otherwise noted
I
I
I
I
V
V
V
V
I
I
I
I
I
I
I
I
I
V
f = 140 kHz
V
f = 140 kHz
I
f = 100 MHz
I
I
I
I
I
I
I
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
B1
C
B
C
B1
CB
CE
CE
EB
CB
BE
= 10mA,V
= 3.0 mA, I
= 100 A, V
= 100 A, I
= 100 A, I
= 1.0 mA, V
= 10 mA, V
= 50 mA, V
= 1.0 mA, I
= 10 mA, I
= 50 mA, I
= 1.0 mA, I
= 10 mA, I
= 50 mA, I
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 1.0 mA
= I
= I
= 8.0 V, I
= 8.0 V, V
= 8.0 V, V
= 4.5 V, I
= 5.0 V, I
= 0.5 V, I
Test Conditions
B2
B2
= 1.0 mA
= 1.0 mA
CE
B
B
B
B
B
E
C
B
B
E
C
E
C
CE
CE
CE
CC
CC
CC
BE
BE
CE
= 1.0 mA
= 5.0 mA
= 1.0 mA
= 5.0 mA
BE
= 0.3V,T
= 0
= 0
= 0.1 mA
= 0.1 mA
= 0,
= 0,
= 0
= 0
= 0
= 0.3 V
= 1.0 V
= 10 V,
= 1.5 V,
= 1.5 V,
= 1.5 V,
= 0
= 0, T
= 0
= 0.5 V
A
A
= 125 C
= -55 C
PNP Switching Transistor
Min
0.75
4.5
8.5
15
15
15
35
50
20
40
Max
0.15
0.18
0.95
120
5.0
1.0
0.6
0.8
1.5
3.0
3.5
10
10
20
15
20
(continued)
Units
MHz
nA
nA
pF
pF
ns
ns
ns
V
V
V
V
V
V
V
V
V
V
A
A
3