KSC945LTA Fairchild Semiconductor, KSC945LTA Datasheet
KSC945LTA
Manufacturer Part Number
KSC945LTA
Description
TRANSISTOR NPN 50V 150MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.KSC945CLTA.pdf
(4 pages)
Specifications of KSC945LTA
Transistor Type
NPN
Current - Collector (ic) (max)
150mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
300mV @ 10mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
350 @ 1mA, 6V
Power - Max
250mW
Frequency - Transition
300MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
©2002 Fairchild Semiconductor Corporation
Audio Frequency Amplifier & High
Frequency OSC.
• Complement to KSA733
• Collector-Base Voltage : V
• High Current Gain Bandwidth Product : f
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
BV
BV
BV
I
I
h
V
f
C
NF
C
CBO
EBO
T
FE
Symbol
FE
J
STG
CBO
CEO
EBO
C
CE
ob
CBO
CEO
EBO
Symbol
(sat)
Classification
Classification
h
FE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
CBO
40 ~ 80
=60V
R
T
a
T
=25 C unless otherwise noted
=300MHz (TYP)
T
Parameter
a
=25 C unless otherwise noted
70 ~ 140
KSC945
O
I
I
I
V
V
V
I
V
V
V
f=1KHz, R
C
C
E
C
CB
EB
CE
CE
CB
CE
=10 A, I
=100 A, I
=10mA, I
=100mA, I
=3V, I
=40V, I
=6V, I
=6V, I
=6V, I
=6V, I
Test Condition
C
C
C
E
C
C
S
B
E
=0
=0, f=1MHz
=1.0mA
=10mA
=0.5mA
=0
=500
E
=0
=0
B
=0
=10mA
120 ~ 240
Y
1. Emitter 2. Base 3. Collector
1
Min.
60
50
40
5
200 ~ 400
-55 ~ 150
Value
G
150
250
150
60
50
5
Typ.
0.15
300
2.5
4.0
TO-92
Max.
700
0.1
0.1
0.3
350 ~ 700
Rev. A2, September 2002
Units
L
mW
mA
V
V
V
C
C
Units
MHz
pF
dB
V
V
V
V
A
A
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KSC945LTA Summary of contents
Page 1
... DC Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE f Current Gain Bandwidth Product T C Output Capacitance ob NF Noise Figure h Classification FE Classification ©2002 Fairchild Semiconductor Corporation KSC945 =300MHz (TYP =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I =100 =10mA ...
Page 2
... [V], COLLECTOR-EMITTER VOLTAGE CE Figure 1. Static Characteristic 1000 100 [mA], COLLECTOR CURRENT C Figure 3. DC current Gain 100 [V], COLLECTOR-BASE VOLTAGE CB Figure 5. Output Capacitance ©2002 Fairchild Semiconductor Corporation 100 = 300 250 200 150 100 0.1 0 0.1 0.01 100 1000 1 Figure 4. Base-Emitter Saturation Voltage ...
Page 3
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A2, September 2002 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...