SS9013HBU Fairchild Semiconductor, SS9013HBU Datasheet

TRANSISTOR NPN 20V 500MA TO-92

SS9013HBU

Manufacturer Part Number
SS9013HBU
Description
TRANSISTOR NPN 20V 500MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of SS9013HBU

Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
600mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
144 @ 50mA, 1V
Power - Max
625mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
©2002 Fairchild Semiconductor Corporation
1W Output Amplifier of Potable Radios in
Class B Push-pull Operation.
• High total power dissipation. (P
• High Collector Current. (I
• Complementary to SS9012
• Excellent h
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
BV
BV
BV
I
I
h
h
V
V
V
C
CBO
EBO
FE
Symbol
FE1
FE2
J
STG
CBO
CEO
EBO
C
CE
BE
BE
CBO
CEO
EBO
Symbol
(sat)
(on)
(sat)
Classification
Classification
h
FE
FE1
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
linearity.
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
C
Parameter
=500mA)
T
=625mW)
64 ~ 91
D
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
SS9013
78 ~ 112
I
I
I
V
V
V
V
I
I
V
C
C
E
C
C
E
CB
EB
CE
CE
CE
=100 A, I
=100 A, I
=1mA, I
=500mA, I
=500mA, I
=3V, I
=25V, I
=1V, I
=1V, I
=1V, I
Test Condition
C
C
C
C
B
E
=0
=0
=50mA
=500mA
=10mA
E
C
B
B
=0
=0
=0
=50mA
=50mA
96 ~ 135
F
1. Emitter 2. Base 3. Collector
1
Min.
0.6
40
20
64
40
5
112 ~ 166
-55 ~ 150
Ratings
500
625
150
G
40
20
5
Typ.
0.16
0.91
0.67
120
120
TO-92
Max.
100
100
202
0.6
1.2
0.7
144 ~ 202
Rev. A4, November 2002
Units
H
mW
mA
V
V
V
C
C
Units
nA
nA
V
V
V
V
V
V

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SS9013HBU Summary of contents

Page 1

... EBO h DC Current Gain FE1 h FE2 V (sat) Collector-Emitter Saturation Voltage CE V (sat) Base-Emitter Saturation Voltage BE V (on) Base-Emitter On Voltage BE h Classification FE Classification FE1 ©2002 Fairchild Semiconductor Corporation SS9013 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I =100 =1mA =100 ...

Page 2

... Typical Characteristics 160 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 1. Static Characteristic 10000 1000 V (sat) BE 100 100 I [mA], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage ©2002 Fairchild Semiconductor Corporation 1000 I = 140 120 100 A B 100 1000 100 10 V (sat 1000 10000 Figure 4. Current Gain Bandwidth Product ...

Page 3

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A4, November 2002 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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