BC33725BU Fairchild Semiconductor, BC33725BU Datasheet
BC33725BU
Manufacturer Part Number
BC33725BU
Description
TRANSISTOR NPN 45V 800MA TO-92
Manufacturer
Fairchild Semiconductor
Specifications of BC33725BU
Transistor Type
NPN
Current - Collector (ic) (max)
800mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
700mV @ 50mA, 500mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 100mA, 1V
Power - Max
625mW
Frequency - Transition
100MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.8 A
Maximum Dc Collector Current
0.8 A
Power Dissipation
625 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Number Of Elements
1
Collector-emitter Voltage
45V
Emitter-base Voltage
5V
Collector Current (dc) (max)
800mA
Dc Current Gain (min)
160
Frequency (max)
100MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-92
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BC33725BU
Manufacturer:
Fairchild Semiconductor
Quantity:
71 365
Part Number:
BC33725BU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
1997 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
C
D
J
CEO
CES
EBO
JC
JA
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced from
Process 12. See TN3019A for characteristics.
Absolute Maximum Ratings*
, T
*
Thermal Characteristics
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
stg
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
E
Derate above 25 C
B
C
BC337-16
BC337-25
Characteristic
TO-92
Parameter
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
BC337-16 / BC337-25
Max
83.3
625
200
5.0
-55 to +150
Value
5.0
1.0
45
50
Units
Units
mW/ C
mW
C/W
C/W
V
V
V
A
C
33716-25, Rev B
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BC33725BU Summary of contents
Page 1
... These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Characteristic P Total Device Dissipation D Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient JA 1997 Fairchild Semiconductor Corporation TO- 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted BC337-16 / BC337-25 Value Units 5 ...
Page 2
Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Em itter Breakdown (BR)CEO Voltage V Collector-Base Breakdown Voltage (BR)CES V Em itter-Base Breakdown Voltage (BR)EBO I Collector Cutoff Current CBO I Em itter Cutoff Current EBO ON CHARACTERISTICS h DC Current Gain ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...