MMBT5962 Fairchild Semiconductor, MMBT5962 Datasheet - Page 3

• Manufacturer Part Number: MMBT5962
• Description: TRANSISTOR NPN GP SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT5962

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 500µA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 600 @ 10mA, 5V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 8 V
• Continuous Collector Current: 0.1 A
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 600
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 45V
• Emitter-base Voltage: 8V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 450
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Qualification Stress Test and Sample Size Detail
Device #1 2N7002
Package:
006
#Leads:
Precondition Description:
Pg. 3