SS8550BTA Fairchild Semiconductor, SS8550BTA Datasheet
SS8550BTA
Manufacturer Part Number
SS8550BTA
Description
TRANSISTOR PNP 25V 1.5A TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.SS8550BBU.pdf
(3 pages)
Specifications of SS8550BTA
Transistor Type
PNP
Current - Collector (ic) (max)
1.5A
Voltage - Collector Emitter Breakdown (max)
25V
Vce Saturation (max) @ Ib, Ic
500mV @ 80mA, 800mA
Dc Current Gain (hfe) (min) @ Ic, Vce
85 @ 100mA, 1V
Power - Max
1W
Frequency - Transition
200MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
25 V
Emitter- Base Voltage Vebo
- 6 V
Continuous Collector Current
- 1.5 A
Maximum Dc Collector Current
1.5 A
Power Dissipation
1 W
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
85
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
SS8550 Rev. 1.0.0
© 2007 Fairchild Semiconductor Corporation
SS8550
2W Output Amplifier of Portable Radios in Class B Push-pull Operation
Features
• Complimentary to SS8050
• Collector Current: I
• Collector Power Dissipation: P
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
BV
BV
BV
I
I
h
h
h
V
V
V
C
f
C
CBO
EBO
T
FE
FE1
FE2
FE3
J
STG
CBO
CEO
EBO
C
Symbol
CE
BE
BE
ob
CBO
CEO
EBO
Classification
(sat)
(sat)
(on)
Symbol
Classification
h
FE2
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
Output Capacitance
Current Gain Bandwidth Product
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
=1.5A
Parameter
C
=1W (T
T
C
a
=25×C)
=25×C unless otherwise noted
85 ~ 160
T
a
=25×C unless otherwise noted
B
Parameter
I
I
I
V
V
V
V
V
I
I
V
V
f=1MHz
V
C
C
E
C
C
CB
EB
CE
CE
CE
CE
CB
CE
= -100μA, I
= -100μA, I
= -2mA, I
= -800mA, I
= -800mA, I
= -35V, I
= -6V, I
= -1V, I
= -1V, I
= -1V, I
= -1V, I
= -10V, I
= -10V, I
1
Test Condition
C
B
C
C
C
C
=0
E
=0
E
C
= -5mA
= -100mA
= -800mA
= -10mA
C
E
=0
B
B
=0
= -50mA
=0
=0
= -80mA
= -80mA
120 ~ 200
C
Min.
100
-40
-25
45
85
40
-6
1. Emitter 2. Base 3. Collector
1
-65 ~ 150
Ratings
-1.5
150
-40
-25
-6
1
-0.28
-0.98
-0.66
Typ.
170
160
200
80
15
160 ~ 300
Max.
TO-92
-100
-100
-0.5
-1.2
-1.0
300
D
www.fairchildsemi.com
March 2008
Units
°C
°C
W
V
V
V
A
Units
MHz
nA
nA
pF
V
V
V
V
V
V
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SS8550BTA Summary of contents
Page 1
... Base-Emitter Saturation Voltage BE V (on) Base-Emitter on Voltage BE C Output Capacitance ob f Current Gain Bandwidth Product T h Classification FE Classification h FE2 © 2007 Fairchild Semiconductor Corporation SS8550 Rev. 1.0.0 =25× =25×C unless otherwise noted a Parameter T =25×C unless otherwise noted a Test Condition I = -100μ ...
Page 2
... V -10 -0.1 -1 -10 I [mA], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 -10 V [V], COLLECTOR-BASE VOLTAGE CB Figure 5. Collector Output Capacitance © 2007 Fairchild Semiconductor Corporation SS8550 Rev. 1.0.0 1000 I =-4.0mA B I =-3.5mA B I =-3.0mA B I =-2.5mA B I =-2.0mA B I =-1.5mA ...
Page 3
... Fairchild Semiconductor Corporation SS8550 Rev. 1.0.0 3 www.fairchildsemi.com ...