TRANSISTOR NPN 30V 100MA TO-92

BC548

Manufacturer Part NumberBC548
DescriptionTRANSISTOR NPN 30V 100MA TO-92
ManufacturerFairchild Semiconductor
BC548 datasheet
 

Specifications of BC548

Transistor TypeNPNCurrent - Collector (ic) (max)100mA
Voltage - Collector Emitter Breakdown (max)30VVce Saturation (max) @ Ib, Ic600mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce110 @ 2mA, 5VPower - Max500mW
Frequency - Transition300MHzMounting TypeThrough Hole
Package / CaseTO-92-3 (Standard Body), TO-226ConfigurationSingle
Transistor PolarityNPNMounting StyleThrough Hole
Collector- Emitter Voltage Vceo Max30 VEmitter- Base Voltage Vebo5 V
Continuous Collector Current0.1 AMaximum Dc Collector Current0.1 A
Power Dissipation0.5 WMaximum Operating Frequency300 MHz
Maximum Operating Temperature+ 150 CDc Collector/base Gain Hfe Min110
Lead Free Status / RoHS StatusLead free / RoHS CompliantCurrent - Collector Cutoff (max)-
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Switching and Applications
• High Voltage: BC546, V
=65V
CEO
• Low Noise: BC549, BC550
• Complement to BC556 ... BC560
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol
V
Collector-Base Voltage
CBO
V
Collector-Emitter Voltage : BC546
CEO
V
Emitter-Base Voltage
EBO
I
Collector Current (DC)
C
P
Collector Power Dissipation
C
T
Junction Temperature
J
T
Storage Temperature
STG
Electrical Characteristics
Symbol
Parameter
I
Collector Cut-off Current
CBO
h
DC Current Gain
FE
V
(sat)
Collector-Emitter Saturation Voltage
CE
V
(sat)
Base-Emitter Saturation Voltage
BE
V
(on)
Base-Emitter On Voltage
BE
f
Current Gain Bandwidth Product
T
C
Output Capacitance
ob
C
Input Capacitance
ib
NF
Noise Figure
: BC546/547/548
: BC549/550
: BC549
: BC550
h
Classification
FE
Classification
h
FE
©2002 Fairchild Semiconductor Corporation
BC546/547/548/549/550
T
=25 C unless otherwise noted
a
Parameter
: BC546
: BC547/550
: BC548/549
: BC547/550
: BC548/549
: BC546/547
: BC548/549/550
T
=25 C unless otherwise noted
a
Test Condition
V
=30V, I
=0
CB
E
V
=5V, I
=2mA
CE
C
I
=10mA, I
=0.5mA
C
B
I
=100mA, I
=5mA
C
B
I
=10mA, I
=0.5mA
C
B
I
=100mA, I
=5mA
C
B
V
=5V, I
=2mA
CE
C
V
=5V, I
=10mA
CE
C
V
=5V, I
=10mA, f=100MHz
CE
C
V
=10V, I
=0, f=1MHz
CB
E
V
=0.5V, I
=0, f=1MHz
EB
C
V
=5V, I
=200 A
CE
C
f=1KHz, R
=2K
G
V
=5V, I
=200 A
CE
C
R
=2K , f=30~15000MHz
G
A
110 ~ 220
200 ~ 450
TO-92
1
1. Collector 2. Base 3. Emitter
Value
Units
80
V
50
V
30
V
65
V
45
V
30
V
6
V
5
V
100
mA
500
mW
150
-65 ~ 150
Min.
Typ.
Max.
15
110
800
90
250
200
600
700
900
580
660
700
720
300
3.5
6
9
2
10
1.2
4
1.4
4
1.4
3
B
C
420 ~ 800
Rev. A2, August 2002
C
C
Units
nA
mV
mV
mV
mV
mV
mV
MHz
pF
pF
dB
dB
dB
dB

BC548 Summary of contents

  • Page 1

    ... Input Capacitance ib NF Noise Figure : BC546/547/548 : BC549/550 : BC549 : BC550 h Classification FE Classification h FE ©2002 Fairchild Semiconductor Corporation BC546/547/548/549/550 T =25 C unless otherwise noted a Parameter : BC546 : BC547/550 : BC548/549 : BC547/550 : BC548/549 : BC546/547 : BC548/549/550 T =25 C unless otherwise noted a Test Condition V =30V =5V, I =2mA =10mA, I =0.5mA =100mA, I =5mA =10mA ...

  • Page 2

    ... V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 1. Static Characteristic 1000 100 [mA], COLLECTOR CURRENT C Figure 3. DC current Gain 100 [V], COLLECTOR-BASE VOLTAGE CB Figure 5. Output Capacitance ©2002 Fairchild Semiconductor Corporation 100 250 200 150 100 0.1 0 Figure 2. Transfer Characteristic 10000 1000 100 10 100 1000 1 Figure 4. Base-Emitter Saturation Voltage ...

  • Page 3

    ... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A2, August 2002 ...

  • Page 4

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...