2N6426 Fairchild Semiconductor, 2N6426 Datasheet - Page 2

• Manufacturer Part Number: 2N6426
• Description: TRANSISTOR DARL NPN 40V TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of 2N6426

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1.2A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 500µA, 500mA
• Current - Collector Cutoff (max): 1µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 500mA, 5V
• Power - Max: 625mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 12 V
• Collector- Base Voltage Vcbo: 40 V
• Maximum Dc Collector Current: 1.2 A
• Maximum Collector Cut-off Current: 0.05 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 20000
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

OFF CHARACTERISTICS
V
V
V
I
I
I
C
C
h
h
h
NF
h
V
V
V
Symbol
CBO
CEO
EBO
ON CHARACTERISTICS*
FE
SMALL SIGNAL CHARACTERISTICS
fe
ie
oe
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
BE(
ob
ib
Electrical Characteristics
sat
on
*
sat
Pulse Test: Pulse Width
)
)
)
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Input Impedance
Output Admittance
Noise Figure
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
300 s, Duty Cycle 2.0%
Parameter
TA = 25°C unless otherwise noted
I
I
I
V
V
V
V
V
I
f = 1.0 kHz
I
f = 1.0 kHz
I
R
f = 10 kHz to 15.7 kHz
V
V
V
I
I
I
I
C
C
E
C
C
C
C
C
C
C
CB
CE
EB
CB
EB
CE
CE
CE
s
= 10 A, I
= 10 mA, I
= 100 A, I
= 10 mA, V
= 10 mA, V
= 1.0 mA, V
= 50 mA, I
= 500 mA, I
= 500 mA, I
= 50 mA, V
= 100 k ,
= 10 V, I
= 1.0 V, I
= 30 V, I
= 25 V, I
= 10 V, I
= 5.0 V, I
= 5.0 V, I
= 5.0 V, I
Test Conditions
C
B
E
B
C
E
B
C
E
C
C
C
CE
CE
= 0
CE
= 0
= 0
= 0
= 0
B
B
= 0, f = 1.0 MHz
CE
= 0.5 mA
= 0, f = 1.0 MHz
= 0
= 10 mA
= 100 mA
= 500 mA
= 0.5 mA
= 0.5 mA
= 5.0 V,
= 5.0 V,
= 5.0 V
= 5.0 V,
NPN Darlington Transistor
20,000
20,000
30,000
20,000
Min
100
40
40
12
200,000
300,000
200,000
2,000
1,000
Max
1.75
1.0
7.0
50
50
1.2
1.5
2.0
15
10
(continued)
Units
k
mho
nA
nA
pF
pF
dB
V
V
V
V
V
V
V
A