PZT3906 Fairchild Semiconductor, PZT3906 Datasheet

TRANSISTOR GP PNP 40V SOT-223

PZT3906

Manufacturer Part Number
PZT3906
Description
TRANSISTOR GP PNP 40V SOT-223
Manufacturer
Fairchild Semiconductor
Datasheets

Specifications of PZT3906

Transistor Type
PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
1W
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage(max)
40V
Emitter-base Voltage (max)
5V
Collector Current (dc) (max)
200mA
Dc Current Gain (min)
100
Power Dissipation
1W
Frequency (max)
250MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Configuration
Single Dual Collector
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Maximum Operating Frequency
250 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 65 C
Collector Emitter Voltage V(br)ceo
40V
Power Dissipation Pd
1W
Dc Collector Current
200mA
Dc Current Gain Hfe
300
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PZT3906
Manufacturer:
FSC
Quantity:
12 500
Company:
Part Number:
PZT3906
Quantity:
180
2010 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
D
C
CEO
CBO
EBO
J
JC
JA
Thermal Characteristics
*
**
, T
PNP General Purpose Amplifier
C
*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
This device is designed for general purpose amplifier and switching
applications at collector currents of 10 A to 100 mA.
Absolute Maximum Ratings*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
B
stg
E
2N3906
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Derate above 25 C
TO-92
Characteristic
Parameter
T
MMBT3906
A
= 25°C unless otherwise noted
SOT-23
Mark: 2A
C
T
A
= 25°C unless otherwise noted
B
2N3906
83.3
625
200
5.0
E
*MMBT3906
2
.
Max
350
357
2.8
-55 to +150
Value
PZT3906
SOT-223
-200
-5.0
-40
-40
C
**PZT3906
2N3906/MMBT3906/PZT3906, Rev A1
1,000
125
8.0
B
Units
C
mA
C
V
V
V
mW/ C
Units
E
mW
C/W
C/W

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PZT3906 Summary of contents

Page 1

... SOT-23 Mark 25°C unless otherwise noted A Parameter T = 25°C unless otherwise noted A 2N3906 625 5.0 83.3 200 PZT3906 SOT-223 Value Units -40 V -40 V -5.0 V -200 mA -55 to +150 C Max Units *MMBT3906 **PZT3906 350 1,000 mW 2.8 8.0 mW/ C C/W 357 125 C 2N3906/MMBT3906/PZT3906, Rev A1 ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Base Cutoff Current BL I Collector Cutoff Current CEX ON CHARACTERISTICS h DC Current Gain * FE V ...

Page 3

Typical Characteristics Typical Pulsed Current Gain vs Collector Current 250 125 °C 200 150 25 °C 100 - 40 °C 50 0.1 0.2 0 COLLECTOR CURRE NT (mA) C Base-Emitter Saturation Voltage vs Collector ...

Page 4

Typical Characteristics Noise Figure vs Frequency 100 1.0 mA 100 0 FREQUENCY (kHz) Switching Times ...

Page 5

Typical Characteristics Voltage Feedback Ratio 100 COLLECTOR CURRENT (mA) C Output Admittance 1000 100 10 0 COLLECTOR CURRENT (mA) C PNP General Purpose Amplifier (continued 0.1 0 ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

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