BCP56 Fairchild Semiconductor, BCP56 Datasheet - Page 2

• Manufacturer Part Number: BCP56
• Description: TRANSISTOR NPN 80V 1.2A SOT-223
• Manufacturer: Fairchild Semiconductor

Specifications of BCP56

• Transistor Type: NPN
• Current - Collector (ic) (max): 1.2A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 150mA, 2V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1.2 A
• Maximum Dc Collector Current: 1.2 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 40
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

*Pulse Test: Pulse Width
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
OFF CHARACTERISTICS
BV
BV
BV
I
I
ON CHARACTERISTICS*
h
V
V
CBO
EBO
Symbol
FE
CE(sat)
BE(on)
CEO
CBO
EBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
300 s, Duty Cycle
Parameter
2.0%
T
A = 25°C unless otherwise noted
I
I
I
V
V
V
I
I
I
I
I
C
C
E
C
C
C
C
C
CB
CB
EB
= 10 A
= 10 mA
= 100 A
= 5 mA, V
= 150 mA, V
= 500mA, V
= 500 m A, I
= 500 m A, V
= 5V
= 30 V
= 30 V, T
Test Conditions
CE
j
= +125°C
CE
B
CE
= 2V
CE
= 50 mA
= 2 V
= 2V
= 2 V
Min
100
80
25
40
25
5
250
Max
100
0.5
10
10
1
Pr3947_REV A
Units
nA
uA
V
V
V
V
V
-
A