TN4033A Fairchild Semiconductor, TN4033A Datasheet

TRANS GP PNP 80V 1A TO-226

TN4033A

Manufacturer Part Number
TN4033A
Description
TRANS GP PNP 80V 1A TO-226
Manufacturer
Fairchild Semiconductor
Datasheet
1.TN4033A.pdf (9 pages)

Specifications of TN4033A

Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 5V
Power - Max
1W
Mounting Type
Through Hole
Package / Case
TO-92-3 (Long Body), TO-226
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
1 A
Maximum Dc Collector Current
1 A
Power Dissipation
1 W
Dc Collector/base Gain Hfe Min
100
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
TN4033A
Manufacturer:
FSC
Quantity:
2 626
Company:
H&T Electronics H&T Electronics
Part Number:
TN4033A
Quantity:
1 500
1997 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
C
D
CEO
CBO
EBO
J
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
PNP General Purpose Amplifier
*
Thermal Characteristics
JC
JA
, T
This device is designed for general purpose amplifier and switching
applications at currents to 500 mA and collector voltages up to 70V.
Sourced from Process 67.
Absolute Maximum Ratings*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
stg
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
C
Derate above 25 C
B
E
TN4033A
Characteristic
TO-226
Parameter
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
TN4033A
Max
125
1.0
8.0
50
-55 to +150
Value
1.0
5.0
80
80
Units
mW/ C
Units
C/W
C/W
V
V
V
A
W
C

Related parts for TN4033A

Image
Part Number
Description
Manufacturer
Datasheet
Request R
SM2G50US60
Part Number:
SM2G50US60
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
SM2G50US60.pdf (10 pages)
FTP5027RTU
Part Number:
FTP5027RTU
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
FTP5021OTU
Part Number:
FTP5021OTU
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
FDMS86300DC
Part Number:
FDMS86300DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86300DC.pdf (8 pages)
FDMS3006SDC
Part Number:
FDMS3006SDC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS3006SDC.pdf (9 pages)
FDMS3008SDC
Part Number:
FDMS3008SDC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS3008SDC.pdf (9 pages)
FDMS3016DC
Part Number:
FDMS3016DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS3016DC.pdf (8 pages)
FDMS86101DC
Part Number:
FDMS86101DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86101DC.pdf (8 pages)
FDD86113LZ
Part Number:
FDD86113LZ
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDD86113LZ.pdf (6 pages)
FDMS86500DC
Part Number:
FDMS86500DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86500DC.pdf (8 pages)
FDMS8558S
Part Number:
FDMS8558S
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS8558S.pdf (8 pages)
FDMS8560S
Part Number:
FDMS8560S
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS8560S.pdf (8 pages)
FDMS8570S
Part Number:
FDMS8570S
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS8570S.pdf (8 pages)
FDMC86116LZ
Part Number:
FDMC86116LZ
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMC86116LZ.pdf (7 pages)
FDMS86250
Part Number:
FDMS86250
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86250.pdf (7 pages)

TN4033A Summary of contents

Page 1

... Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient JA 1997 Fairchild Semiconductor Corporation TO-226 TA = 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Value Units 5.0 V 1.0 A -55 to +150 C Max Units TN4033A 1.0 W 8.0 mW/ C 125 C/W 50 C/W ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Sustaining Voltage* (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector-Cutoff Current CBO I Emitter-Cutoff Current EBO ON CHARACTERISTICS h DC Current Gain FE Collector-Emitter Saturation Voltage V ...

Page 3

Typical Characteristics Typical Pulsed Current Gain vs Collector Current 300 250 200 125 °C 150 25 °C 100 °C 0 0.1 0 COLLECTOR CURRENT (mA) C Base-Emitter Saturation Voltage vs Collector ...

Page 4

Typical Characteristics Switching Times vs Collector Current 240 V = -10V CE 200 160 V CE 120 COLLECTOR CURRENT (mA TO-226 0.75 0.5 0. PNP General Purpose Amplifier ...

Page 5

... TO-226AE Tape and Reel Data ©2000 Fairchild Semiconductor International October 1999, Rev. A1 ...

Page 6

TO-226AE Tape and Reel Data, continued October 1999, Rev. A1 ...

Page 7

TO-226AE Tape and Reel Data, continued October 1999, Rev. A1 ...

Page 8

... TO-226AE Package Dimensions TO-226AE (FS PKG Code 95, 99) ©2000 Fairchild Semiconductor International 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.300 For leadformed option ordering, refer to Tape & Reel data information. October 1999, Rev. A1 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

Related keywords