BSP50 Fairchild Semiconductor, BSP50 Datasheet
BSP50
Manufacturer Part Number
BSP50
Description
TRANSISTOR DARL NPN 45V SOT-223
Manufacturer
Fairchild Semiconductor
Datasheet
1.BSP50.pdf
(3 pages)
Specifications of BSP50
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
800mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
1.3V @ 500µA, 500mA
Current - Collector Cutoff (max)
50nA
Dc Current Gain (hfe) (min) @ Ic, Vce
2000 @ 500mA, 10V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
45V
Collector-base Voltage(max)
60V
Emitter-base Voltage (max)
5V
Base-emitter Saturation Voltage (max)
1.9@0.5mA@500mAV
Collector-emitter Saturation Voltage
1.3@0.5mA@500mAV
Collector Current (dc) (max)
800mA
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSP50
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Part Number:
BSP50,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Company:
Part Number:
BSP50E6327
Manufacturer:
SEMITEC
Quantity:
7 339
©2004 Fairchild Semiconductor Corporation
NPN Darlington Transistor
• This device is designed for applications requiring extremly high current
• Sourced from process 03.
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Thermal Characteristics
V
V
V
I
T
Off Characteristics
V
V
I
I
On Characteristics
h
V
V
P
R
C
CES
EBO
Symbol
gain at collector currents to 500mA.
FE
J
CER
CBO
EBO
(BR)CBO
(BR)EBO
CE
BE
D
, T
JA
Symbol
(sat)
(sat)
Symbol
STG
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
Parameter
T
A
T
=25 C unless otherwise noted
Parameter
a
=25 C unless otherwise noted
Parameter
T
a
=25 C unless otherwise noted
- Continuous
BSP50
I
I
V
V
I
I
I
I
C
E
C
C
C
C
CE
EB
= 10 A, I
= 100 A, I
= 150mA, V
= 500mA, V
= 500mA, I
= 500mA, I
= 4.0V, I
= 45V, V
Test Conditions
C
C
E
BE
= 0
B
B
CE
CE
= 0
= 0
= 0.5mA
= 0.5mA
= 0
= 10V
= 10V
- 55 ~ +150
1. Base 2. Collector 3. Emitter
Max.
1000
125
Value
8.0
800
45
60
1000
2000
Min.
5
4
60
5
Typ.
1
SOT-223
Max.
2
1.3
1.9
50
50
mW/ C
Units
Units
mA
mW
3
C/W
V
V
V
Rev. A, May 2004
C
Units
nA
nA
V
V
V
V
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BSP50 Summary of contents
Page 1
... DC Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE V (sat) Base-Emitter Saturation Voltage BE Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Ambient JA ©2004 Fairchild Semiconductor Corporation BSP50 T =25 C unless otherwise noted a Parameter - Continuous T =25 C unless otherwise noted a Test Conditions I = 100 ...
Page 2
... Package Dimensions (0.95) ©2004 Fairchild Semiconductor Corporation SOT-223 3.00 0.10 MAX1.80 2.30 TYP 0.70 0.10 (0.95) 4.60 0.25 0.25 6.50 0.20 +0.04 0.06 –0.02 +0.10 –0.05 Dimensions in Millimeters Rev. A, May 2004 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...