MJE170STU Fairchild Semiconductor, MJE170STU Datasheet
MJE170STU
Manufacturer Part Number
MJE170STU
Description
TRANSISTOR PNP 40V 3A TO-126
Manufacturer
Fairchild Semiconductor
Datasheet
1.MJE170STU.pdf
(5 pages)
Specifications of MJE170STU
Transistor Type
PNP
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1.7V @ 600mA, 3A
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 100mA, 1V
Power - Max
1.5W
Frequency - Transition
50MHz
Mounting Type
Through Hole
Package / Case
TO-126-3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
- 7 V
Continuous Collector Current
- 3 A
Maximum Dc Collector Current
3 A
Power Dissipation
12.5 W
Maximum Operating Frequency
50 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
50
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MJE170STU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2001 Fairchild Semiconductor Corporation
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
Low Power Audio Amplifier
Low Current, High Speed Switching Applications
V
V
V
I
I
I
P
T
T
BV
C
CP
B
I
I
h
V
V
V
f
C
J
STG
CBO
EBO
T
CBO
CEO
EBO
C
FE
Symbol
CE
BE
BE
ob
Symbol
CEO
(sat)
(on)
(sat)
Collector-Emitter Breaksown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
a
C
T
=25 C)
=25 C)
C
MJE170/171/172
=25 C unless otherwise noted
: MJE170
: MJE171
: MJE172
: MJE171
: MJE172
: MJE170
: MJE171
: MJE172
: MJE170
Parameter
T
C
=25 C unless otherwise noted
I
V
V
V
V
V
V
V
V
V
V
I
I
I
I
I
V
V
V
C
C
C
C
C
C
CB
CB
CB
CB
CB
CB
BE
CE
CE
CE
CE
CE
CB
= 10mA, I
= - 500mA, I
= - 1.5A, I
= - 3A, I
= - 1.5A, I
= - 3A, I
= - 60V, I
= - 80V, I
= - 100V, I
= - 60V, I
= - 80V, I
= - 100V, I
= - 7V, I
= - 1V, I
= - 1V, I
= - 1V, I
= - 1V, I
= - 10V, I
= - 10V, I
: MJE171
: MJE172
: MJE171
: MJE172
: MJE170
: MJE170
B
B
Test Condition
B
C
= - 600mA
= - 600mA
C
C
C
B
B
C
B
E
E
E
C
E
= 0
= 0
= - 150mA
= - 150mA
= - 100mA
= - 500mA
= - 1.5A
= - 500mA
E
E
B
= 0
= 0
= 0, @T
= 0, @T
= - 100mA
= 0, f = 0.1MHz
= 0
= 0, @T
= - 50mA
C
C
C
= 150 C
= 150 C
1
1. Emitter
= 150 C
- 65 ~ 150
Value
- 100
12.5
150
- 60
- 80
- 40
- 60
- 80
1.5
2.Collector
- 7
- 3
- 6
- 1
Min.
-40
-60
-80
50
30
12
50
TO-126
Max.
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
250
-0.3
-0.9
-1.7
-1.5
-2.0
-1.2
50
3.Base
Rev. A2, June 2001
Units
W
W
Units
V
V
V
V
V
V
V
A
A
A
C
C
MHz
mA
mA
mA
pF
V
V
V
V
V
V
V
V
V
A
A
A
A
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MJE170STU Summary of contents
Page 1
... FE V (sat) Collector-Emitter Saturation Voltage CE V (sat) Base-Emitter Saturation Voltage BE V (on) Base-Emitter ON Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob ©2001 Fairchild Semiconductor Corporation MJE170/171/172 T =25 C unless otherwise noted C Parameter : MJE170 : MJE171 : MJE172 : MJE170 : MJE171 : MJE172 = = =25 C unless otherwise noted C ...
Page 2
... V [V], COLLECTOR-BASE VOLTAGE CB Figure 3. Collector Output Capacitance 1000 t STG t F 100 10 -0.1 I [A], COLLECTOR CURRENT C Figure 5. Turn Off Time ©2001 Fairchild Semiconductor Corporation -2 -1V CE -1.8 -1.6 -1.4 -1.2 -1.0 V -0.8 -0.6 -0.4 -0.2 V (sat) CE -0.0 -0.01 -1 Figure 2. Base-Emitter Saturation Voltage 1000 f=0 ...
Page 3
... Typical Characteristics 100 o Tc[ C], CASE TEMPERATURE Figure 7. DC current Gain ©2001 Fairchild Semiconductor Corporation (Continued) 125 150 175 Rev. A2, June 2001 ...
Page 4
... Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2001 Fairchild Semiconductor Corporation TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A2, June 2001 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...