KSB744AYSTU Fairchild Semiconductor, KSB744AYSTU Datasheet
Home Discrete Semiconductor Products Transistors (BJT) - Single KSB744AYSTU
Manufacturer Part Number
KSB744AYSTU
Description
TRANSISTOR PNP 60V 3A TO-126
Manufacturer
Fairchild Semiconductor
Specifications of KSB744AYSTU
Transistor Type
PNP
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
2V @ 150mA, 1.5A
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 500mA, 5V
Power - Max
1W
Frequency - Transition
45MHz
Mounting Type
Through Hole
Package / Case
TO-126-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
©2000 Fairchild Semiconductor International
Audio Frequency Power Amplifier
• Complement to KSD794/KSD794A
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
* PW 10ms, Duty Cycle 50%
Electrical Characteristics
* Pulse Test: PW 350 s, Duty Cycle 2% Pulsed
h
V
I
I
P
h
V
V
I
P
TJ
T
I
I
h
V
V
f
C
FE
C
B
CP
CBO
EBO
T
FE1
FE2
EBO
C
STG
Symbol
CBO
CEO
C
CE
BE
ob
Symbol
(sat)
(sat)
Cassification
Classification
h
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
Current Gain Bandwidth Product
Output Capacitance
FE2
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
T
C
=25 C unless otherwise noted
a
C
=25 C)
T
=25 C)
KSB744/744A
60 ~ 120
C
Parameter
=25 C unless otherwise noted
R
V
V
V
V
I
I
V
V
f = 1MHz
C
C
CB
EB
CE
CE
CE
CB
= -1.5A, I
= -1.5A, I
Test Condition
= -45V, I
= -3V, I
= -5V, I
= -5V, I
= -5V, I
= -10V, I
: KSB744
: KSB744A
C
C
C
C
B
C
E
E
= 0
= -20mA
= -0.5A
= -0.15A
= -0.15A
= -0.1A
100 ~ 200
= 0
= 0
O
1
1. Emitter
Min.
30
60
-55 ~ 150
Value
-0.6
150
-70
-45
-60
2.Collector
10
-5
-3
-5
1
Typ.
120
100
-0.5
-0.8
45
60
160 ~ 320
TO-126
Max.
Y
320
-1
-1
-2
-2
3.Base
Rev. A, February 2000
Units
W
W
V
V
V
V
A
A
A
C
C
Units
MHz
pF
V
V
A
A
Related parts for KSB744AYSTU
KSB744AYSTU Summary of contents
... CE V (sat) * Base-Emitter Saturation Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob * Pulse Test: PW 350 s, Duty Cycle 2% Pulsed h Cassification FE Classification h FE2 ©2000 Fairchild Semiconductor International KSB744/744A T =25 C unless otherwise noted C Parameter : KSB744 : KSB744A = = =25 C unless otherwise noted C Test Condition V = -45V, I ...
... I [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 100 10 1 -0.01 -0.1 I [A], COLLECTOR CURRENT C Figure 5. Current Gain Bandwidth Product ©2000 Fairchild Semiconductor International -1000 -100 -10 = -4mA -2mA B -1 -30 -40 -0.001 1000 I = 10· 100 ...
... Typical Characteristics 160 140 120 100 100 C], CASE TEMPERATURE C Figure 7. Derating Curve of Safe Operating Areas ©2000 Fairchild Semiconductor International (Continued 125 150 175 200 100 125 150 175 200 C], CASE TEMPERATURE C Figure 8. Power Derating Rev. A, February 2000 ...
... Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2000 Fairchild Semiconductor International TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A, February 2000 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® FAST FASTr™ ...
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