BD442STU

Manufacturer Part NumberBD442STU
DescriptionTRANSISTOR PNP 80V 4A TO-126
ManufacturerFairchild Semiconductor
BD442STU datasheet
 


Specifications of BD442STU

Transistor TypePNPCurrent - Collector (ic) (max)4A
Voltage - Collector Emitter Breakdown (max)80VVce Saturation (max) @ Ib, Ic800mV @ 200mA, 2A
Current - Collector Cutoff (max)100µADc Current Gain (hfe) (min) @ Ic, Vce40 @ 500mA, 1V
Power - Max36WFrequency - Transition3MHz
Mounting TypeThrough HolePackage / CaseTO-126-3
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Medium Power Linear and Switching
Applications
• Complement to BD439, BD441 respectively
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol
V
Collector-Base Voltage
CBO
V
Collector-Emitter Voltage
CES
V
Collector-Emitter Voltage
CEO
V
Emitter-Base Voltage
EBO
I
Collector Current (DC)
C
I
*Collector Current (Pulse)
CP
I
Base Current
B
P
Collector Dissipation (T
C
T
Junction Temperature
J
T
Storage Temperature
STG
Electrical Characteristics
Symbol
Parameter
V
(sus)
Collector-Emitter Sustaining Voltage
CEO
I
Collector Cut-off Current
CBO
I
Collector Cut-off Current
CES
I
Emitter Cut-off Current
EBO
h
* DC Current Gain
FE
V
(sat)
* Collector-Emitter Saturation Voltage
CE
V
(on)
* Base-Emitter ON Voltage
BE
f
Current Gain Bandwidth Product
T
* Pulse Test: PW=300 s, duty Cycle=1.5% Pulsed
©2001 Fairchild Semiconductor Corporation
BD440/442
T
=25 C unless otherwise noted
C
Parameter
: BD440
: BD442
: BD440
: BD442
: BD440
: BD442
=25 C)
C
T
=25 C unless otherwise noted
C
Test Condition
: BD440
I
= - 100mA, I
= 0
C
B
: BD442
: BD440
V
= - 60V, I
= 0
CB
E
: BD442
V
= - 80V, I
= 0
CB
E
: BD440
V
= - 60V, V
CE
BE
: BD442
V
= - 80V, V
CE
BE
V
= - 5V, I
= 0
EB
C
: BD440
V
= - 5V, I
= - 10mA
CE
C
: BD442
: BD440
V
= - 1V, I
= - 500mA
CE
C
: BD442
: BD440
V
= - 1V, I
= - 2A
CE
C
: BD442
I
= - 2A, I
= - 0.2A
C
B
V
= - 5V, I
= - 10mA
CE
C
V
= -1 V, I
= - 2A
CE
C
V
= - 1V, I
= - 250mA
CE
C
TO-126
1
1. Emitter
2.Collector
3.Base
Value
Units
- 60
V
- 80
V
- 60
V
- 80
V
- 60
V
- 80
V
- 5
V
- 4
A
- 7
A
- 1
A
36
W
150
C
- 65 ~ 1 50
C
Min.
Typ.
Max.
Units
-60
V
-80
V
- 100
A
- 100
A
= 0
- 100
A
= 0
- 100
A
- 1
mA
20
140
15
140
40
140
40
140
25
15
- 0.8
V
-0.58
V
- 1.5
V
3
MHz
Rev. A1, June 2001

BD442STU Summary of contents

  • Page 1

    ... DC Current Gain FE V (sat) * Collector-Emitter Saturation Voltage CE V (on) * Base-Emitter ON Voltage BE f Current Gain Bandwidth Product T * Pulse Test: PW=300 s, duty Cycle=1.5% Pulsed ©2001 Fairchild Semiconductor Corporation BD440/442 T =25 C unless otherwise noted C Parameter : BD440 : BD442 : BD440 : BD442 : BD440 : BD442 = =25 C unless otherwise noted ...

  • Page 2

    ... BASE-EMITTER VOLTAGE BE Figure 3. Base-Emitter On Voltage -10 I MAX. (Pulsed Max. (Continuous BD440 BD442 -0.1 -1 -10 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation - -1V CE -0.1 -0.01 -1 -10 -0.1 Figure 2. Collector-Emitter Saturation Voltage 1000 V = -1V CE 100 10 1 -1.3 -1.5 -1.8 -2 ...

  • Page 3

    ... Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2001 Fairchild Semiconductor Corporation TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A1, June 2001 ...

  • Page 4

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...