MJD31CTF Fairchild Semiconductor, MJD31CTF Datasheet

TRANSISTOR NPN 100V 3A DPAK

MJD31CTF

Manufacturer Part Number
MJD31CTF
Description
TRANSISTOR NPN 100V 3A DPAK
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MJD31CTF

Transistor Type
NPN
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
1.2V @ 375mA, 3A
Current - Collector Cutoff (max)
50µA
Dc Current Gain (hfe) (min) @ Ic, Vce
10 @ 3A, 4V
Power - Max
1.56W
Frequency - Transition
3MHz
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MJD31CTF
MJD31CTFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MJD31CTF
Manufacturer:
FAIRCHILD
Quantity:
10 000
Part Number:
MJD31CTF
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
MJD31/31C Rev. A3
© 2010 Fairchild Semiconductor Corporation
MJD31/31C
NPN Epitaxial Silicon Transistor
Features
• General Purpose Amplifier
• Low Speed Switching Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP31 and TIP31C
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW≤300μs, Duty Cycle≤2%
Symbol
V
Symbol
V
V
CEO
V
V
V
T
CE
BE
I
I
I
I
h
P
CEO
CES
EBO
CBO
CEO
EBO
T
STG
I
CP
I
f
C
B
FE
C
(sat)
T
J
(on)
(sus)
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
* Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Current Gain Bandwidth Product
Parameter
T
a
=25°C unless otherwise noted
: MJD31
: MJD31C
: MJD31
: MJD31C
: MJD31
: MJD31C
a
T
C
=25°C)
=25°C)
a
Parameter
=25°C unless otherwise noted
1
I
I
V
V
V
V
V
V
V
I
V
V
C
C
C
CE
CE
CE
CE
BE
CE
CE
CE
CE
= 30mA, I
= 30mA, I
= 3A, I
= 40V, I
= 60V, I
= 5V, I
= 4V, I
= 4V, I
= 4A, I
= 10V, I
= 40V, V
= 100V, V
Test Condition
: MJD31C
: MJD31C
: MJD31
: MJD31
1
B
= 375mA
C
C
C
C
B
B
B
B
C
= 0
= 1A
= 3A
= 3A
BE
= 0
= 0
= 0
= 0
= 500mA
BE
1.Base
= 0
= 0
D-PAK
2.Collector
- 65 to 150
Value
1.56
100
100
150
15
1
40
40
5
3
5
1
Min.
100
40
25
10
3
3.Emitter
Max.
November 2010
1.2
1.8
50
50
20
20
50
www.fairchildsemi.com
1
I-PAK
Units
°C
°C
W
W
Units
V
V
V
V
V
A
A
A
MHz
mA
μA
μA
μA
μA
V
V
V
V

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MJD31CTF Summary of contents

Page 1

... FE V (sat) * Collector-Emitter Saturation Voltage CE V (on) * Base-Emitter On Voltage BE f Current Gain Bandwidth Product T * Pulse Test: PW≤300μs, Duty Cycle≤2% © 2010 Fairchild Semiconductor Corporation MJD31/31C Rev =25°C unless otherwise noted a Parameter : MJD31C : MJD31C =25°C) C =25° =25°C unless otherwise noted ...

Page 2

... Figure 1. DC current Gain 1000 100 [V], COLLECTOR BASE VOLTAGE CB Figure 3. Collector Capacitance =30V (off)=10V F CC 0.1 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 5. Turn Off Time © 2010 Fairchild Semiconductor Corporation MJD31/31C Rev 0.1 0. Figure 2. Base-Emitter Saturation Voltage 0.1 10 100 10 STG 1 0.1 0. ...

Page 3

... Typical Performance Characteristics C], CASE TEMPERATURE C Figure 7. Power Derating © 2010 Fairchild Semiconductor Corporation MJD31/31C Rev. A3 (Continued) 100 125 150 175 3 www.fairchildsemi.com ...

Page 4

... Physical Dimensions © 2010 Fairchild Semiconductor Corporation MJD31/31C Rev. A3 D-PAK 4 Dimensions in Millimeters www.fairchildsemi.com ...

Page 5

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower F-PFS FRFET Auto-SPM Build it Now Global Power Resource CorePLUS Green FPS CorePOWER Green FPS ...

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